STD19N3LLH6AG STMicroelectronics

STD19N3LLH6AG Automotive-grade N-channel 30 V, 25 m typ., 10 A STripFET H6 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STD19N3LLH6AG 30 V 33 m 10 A 30 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge Figure 1: Internal schematic diagram High avalanche ruggedness Low gate drive power loss Logic level Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STD19N3LLH6AG 19N3LLH6 DPAK Tape and reel October 2015 DocID028432 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STD19N3LLH6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information..................................... 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID028432 Rev 2