Si4435DYPbF HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 D P-Channel MOSFET S V = -30V DSS 2 7 Surface Mount D S Available in Tape & Reel 3 6 S D Lead-Free 4 5 G D R = 0.020 DS(on) Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, SO-8 infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -10V -8.0 D A GS I T = 70C Continuous Drain Current, V -10V -6.4 A D A GS I Pulsed Drain Current -50 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 09/30/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.019 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.015 0.020 V = -10V, I = -8.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.026 0.035 V = -4.5V, I = -5.0A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 11 S V = -15V, I = -8.0A fs DS D -10 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -10 V = -15V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 40 60 I = -4.6A g D Q Gate-to-Source Charge 7.1 nC V = -15V gs DS Q Gate-to-Drain Mille) Charge 8.0 V = -10V gd GS t Turn-On Delay Time 16 24 V = -15V, V = -10V d(on) DD GS t Rise Time 76 110 I = -1.0A r D t Turn-Off Delay Time 130 200 R = 6.0 d(off) G t Fall Time 90 140 R = 15 f D C Input Capacitance 2320 V = 0V iss GS C Output Capacitance 390 pF V = -15V oss DS C Reverse Transfer Capacitance 270 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the G ISM Pulsed Source Current integral reverse 50 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 34 51 ns T = 25C, I = -2.5A rr J F Q Reverse Recovery Charge 33 50 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, t max. junction temperature. Pulse width 300s duty cycle 2 www.irf.com