SMS05C through SMS24C TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Features Description The SMS series of TVS arrays are designed to protect Transient protection for data lines to sensitive electronics from damage or latch-up due to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) ESD and other voltage-induced transient events. Each IEC 61000-4-4 (EFT) 40A (5/50ns) device will protect up to five lines. They are available IEC 61000-4-5 (Lightning) 24A (8/20s) with operating voltages of 5V, 12V, 15V and 24V. They Small package for use in portable electronics are unidirectional devices and may be used on lines Protects five I/O lines where the signal polarities are above ground. Working voltages: 5V, 12V, 15V and 24V TVS diodes are solid-state devices designed specifically Low leakage current for transient suppression. They feature large cross- Low operating and clamping voltages sectional area junctions for conducting high transient Solid-state silicon avalanche technology currents. They offer desirable characteristics for board level protection including fast response time, low Mechanical Characteristics operating and clamping voltage and no device degrada- EIAJ SOT23-6L package tion. Molding compound flammability rating: UL 94V-0 The SMS series devices may be used to meet the Marking : Marking Code immunity requirements of IEC 61000-4-2, level 4. The Packaging : Tape and Reel per EIA 481 low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDAs, and Applications notebook computers. Cell phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistants (PDAs) Notebooks, Desktops, and Servers Portable Instrumentation Set Top Box Peripherals MP3 Players Cordless Phones Circuit Diagram Schematic & PIN Configuration SOT23-6L (Top View) www.semtech.com Revision 08/11/04 1SMS05C through SMS24C PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit Peak Pulse Power (t=P8/20s) 3s00 Watt p pk Peak Forward Voltage (I =1A, t=V8/20s) 1V.5 F p FP LTead Soldering Temperature 2C60 (10 sec.) L OTperating Temperature -C55 to +125 J STtorage Temperature -C55 to +150 STG Electrical Characteristics SMS05C Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 5V RWM RVeverse Breakdown Voltage I=61mA V BR t RIeverse Leakage Current V=05V, T=25C 2A R RWM CVlamping Voltage I = 5A, t=88/20s 9V. C PP p CVlamping Voltage I = 24A, t=58/20s 1V4. C PP p PIeak Pulse Current t=48/20s 2A PP p JCunction Capacitance Between I/O Pins and 3025 4F0 p j Ground V = 0V, f = 1MHz R SMS12C Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 1V2 RWM RVeverse Breakdown Voltage I=31mA1V3. BR t RIeverse Leakage Current V=112V, T=25C A R RWM CVlamping Voltage I = 5A, t=98/20s 1V C PP p CVlamping Voltage I = 15A, t=38/20s 2V C PP p PIeak Pulse Current t=58/20s 1A PP p JCunction Capacitance Between I/O Pins and 1035 1F5 p j Ground V = 0V, f = 1MHz R www.semtech.com 2004 Semtech Corp. 2