X-On Electronics has gained recognition as a prominent supplier of VTT1225H Phototransistors across the USA, India, Europe, Australia, and various other global locations. VTT1225H Phototransistors are a product manufactured by Excelitas. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

VTT1225H Excelitas

VTT1225H electronic component of Excelitas
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Part No.VTT1225H
Manufacturer: Excelitas
Category: Phototransistors
Description: Phototransistor; 100V; 5°; 400-1050nm; 0.19mm2
Datasheet: VTT1225H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6029 ea
Line Total: USD 1.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6029
5 : USD 1.4846
13 : USD 1.2495
34 : USD 1.1811

   
Manufacturer
Product Category
Mounting
Type Of Photodetector
Viewing Angle
Active Area
Light Current Uce 5V L 950Nm
Wavelength
Collector-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VTT1225H from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VTT1225H and other electronic components in the Phototransistors category and beyond.

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photodiode S & -t r an SiSt or S for high-volu Me a pplication S Phototransistors VTT Series CR Series - PHOTO TRAn SISTORS FOR In DuSTRIAL An D cOMMER c IAL APPLIc ATIOn S Phototransistors VTT Series c R Series a pplications Coin counters Position sensors Remote controllers Ambient light sensing Street light switching Oil burner flame monitoring Safety shields Margin control-printers Monitor paper position and stack height features and Benefits Low cost visible and near IR photo detection product description Low dark current Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. The phototransistor can be viewed as a photodiode whose output current is fed into the base of a Available in package with integrated visible filtering conventional transistor. These photodiode-amplifier combinations are put together to overcome the major limitation of Available in package with integrated IR filtering photodiodes: unity gain. The typical gain of a phototransistor can range from 100 to over 1500. Many applications demand a greater output than can be generated by a photodiode alone. Even Available in a wide range of packages though the signal of a photodiode can be amplified through external circuitry (operational RoHs compliant amplifier for example) this is not always cost effective. In such cases, phototransistors provide a lower cost alternative. Figure 1 c R50te Package Drawing Vt t Series t -1 Package Surface mounting device Solid state ceramic chip High thermal conductivity Special type (CR50TE-DLF) with daylight filter on request www.excelitas.com 34Product Table Phototransistors Vt t Series c R Series c ollector Emitter Saturation Exposed Light c urrent Breakdown Breakdown Voltage Rise/Fall Time Active 100 fc, Dark c urrent I = 100 A, I = 100 A, I = 100 A, Ic = 1.0 mA Angular Spectral c c c Package Area V = 5 V V = 10 V 0 fc 0 fc 100 fc RL = 100 Response Range c E c E min max min min max Typical Typical Symbol Ic VBR(c EO) VBR(c EO) Vc E(SAT) tR / tF 1/2 RAn GE 2 u nit mm mA nA V V V S nm Vt t 1222WH T-1 0.19 1.9 10 VCE = 20 V 50 6.0 0.25 2.0 40 400 -1050 Vt t 1223WH T-1 0.19 1.5 10 VCE = 20 V 40 6.0 0.25 3.0 40 400 -1050 Vt t 1225H T-1 0.19 4.0 100 30 5.0 0.25 1.5 5 400 -1050 Vt t 1226H T-1 0.19 7.5 100 30 5.0 0.25 3.0 5 400 -1050 Vt t 1227H T-1 0.19 12.0 100 30 5.0 0.25 4.0 5 400 -1050 Vt t 3122eH Coax hermetic 0.19 1.2 100 VCE = 20 V 40 6.0 0.25 2.5 8 400 -1050 Vt t 3123eH Coax hermetic 0.19 4.0 100 30 4.0 0.25 4.0 8 400 -1050 Vt t 3323LAH Long T-1 0.19 2.0 20 fc 100 30 5.0 0.25 3.0 10 400 -1050 Vt t 3324LAH Long T-1 0.19 4.0 20 fc 100 30 5.0 0.25 4.0 10 400 -1050 Vt t 3325LAH Long T-1 0.19 6.0 20 fc 100 30 5.0 0.25 5.0 10 400 -1050 Vt t 3423LAH Long T-1 0.19 1.0 20 fc 100 30 5.0 0.25 3.0 10 700 -1050 Vt t 3424LAH Long T-1 0.19 2.0 20 fc 100 30 5.0 0.25 4.0 10 700 -1050 Vt t 3425LAH Long T-1 0.19 3.0 20 fc 100 30 5.0 0.25 5.0 10 700 -1050 Vt t 7122H Lateral 0.19 1.0 100 30 5.0 0.25 2.0 36 400 -1050 Vt t 7123H Lateral 0.19 2.0 100 30 5.0 0.25 2.0 36 400 -1050 Vt t 7125H Lateral 0.19 4.5 100 30 5.0 0.25 2.0 36 400 -1050 Vt t 7222H Lateral 0.19 0.9 100 30 5.0 0.25 2.0 36 700 -1050 Vt t 7223H Lateral 0.19 1.8 100 30 5.0 0.25 2.0 36 700 -1050 Vt t 7225H Lateral 0.19 4.0 100 30 5.0 0.25 4.0 36 700 -1050 Vt t 1212H T-1 0.63 2.0 20 fc 100 30 5.0 0.25 4.0 10 400 -1050 Vt t 1214H T-1 0.63 4.0 20 fc 100 30 5.0 0.25 6.0 10 400 -1050 Vt t 9002H TO-106 flat 0.63 2.0 100 30 6.0 0.55 4.0 50 400 -1050 Vt t 9003H TO-106 flat 0.63 5.0 100 30 6.0 0.55 6.0 50 400 -1050 Vt t 9102H TO-106 lensed 0.63 6.0 100 VCE = 5 V 30 4.0 0.55 6.0 42 400 -1050 Vt t 9103H TO-106 lensed 0.63 13.0 100 VCE = 5 V 30 4.0 0.55 10.0 42 400 -1050 Vt t 1015H TO-46 0.4 25 VCE = 20 V 40 6.0 0.40 5.0 35 400 -1050 Vt t 1016H TO-46 1.0 25 VCE = 20 V 30 6.0 0.40 5.0 35 400 -1050 Vt t 1017H TO-46 2.5 25 20 4.0 0.40 8.0 35 400 -1050 Vt t 1115H TO-46 lensed 1.0 20 fc 100 30 6.0 0.40 5.0 15 400 -1050 Vt t 1116H TO-46 lensed 2.0 20 fc 100 30 4.0 0.40 8.0 15 400 -1050 Vt t 1117H TO-46 lensed 4.0 20 fc 100 30 4.0 0.40 8.0 15 400 -1050 Vt t 9812FH T-1 flat 0.19 0.10 100 30 5.0 0.25 1.5 56 450 - 700 c R50t e Ceramic 0.18 400 VCE = 20 V 40 0.3 IC= 2 mA 4.0 RL = 50 Wide viewing 400 -1070 SMD (A2) angle Figure 2 Figure 3 Package Drawing Vt t Series t -1 Package Package Drawing Vt t Series t o -46 Package www.excelitas.com 35 Phototransistors VTT Series CR Series I c ED

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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