TEMD6200FX01 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES Package type: Surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 2 Radiant sensitive area (in mm ): 0.27 AEC-Q101 qualified High photo sensitivity Adapted to human eye responsivity Angle of half sensitivity: = 60 Floor life: 168 h, MSL 3, acc. J-STD-020 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS DESCRIPTION Automotive sensors TEMD6200FX01 is a high speed and high sensitive PIN Ambient light sensors photodiode in a miniature flat plastic package. It is spectral Backlight dimming sensitivity is closely matched to the human eye. Mobil phones Notebooks Computers PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 TEMD6200FX01 0.04 60 430 to 610 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD6200FX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: Minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 16 V R Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature In accordance with fig. 6 T 260 C sd Thermal resistance junction/ambient R 270 K/W thJA Rev. 1.5, 08-Apr-14 Document Number: 81812 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD6200FX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 lx V 16 V R (BR) Reverse dark current V = 10 V, E = 0 lx I 0.1 5 nA R ro V = 0 V, f = 1 MHz, E = 0 lx C 60 pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 lx C 24 pF R D 2 E = 1 mW/cm , = 550 nm, e I 1A ra V = 5 V R Reverse light current E = 100 lx, V I 0.03 0.04 0.09 A ra CIE illuminant A Angle of half sensitivity 60 deg Wavelength of peak sensitivity 540 nm p Range of spectral bandwidth 430 to 610 nm 0.5 Rise time U = 5 V, R = 50 , TLMW3300 t 150 ns R L r Fall time U = 5 V, R = 50 , TLMW3300 t 150 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 70 E = 0 0 60 f = 1 MHz 100 50 10 40 30 1 V = 5 V R 20 0.1 10 0.01 0 020 40 60 80 100 010 20 30 V - Reverse Voltage (V) 18818 T - Ambient Temperature (C) 20094 R amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Diode Capacitance vs. Reverse Voltage 10 1.0 1 0.8 Photodiode human eye 0.6 0.1 0.4 CIE illuminant A 0.01 V = 5 V R 0.2 0.0 0.001 10 100 1000 10000 400 600 800 1000 E - Illuminance (lx) 20093 20047 Wavelength (nm) V Fig. 2 - Reverse Light Current vs. Illuminance Fig. 4 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.5, 08-Apr-14 Document Number: 81812 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Photocurrent (A) ra I - Reverse Dark Current (nA) ro Relative Spectral Sensitivity C - Diode Capacitance (pF) D