TEMD5510FX01 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES Package type: surface-mount Package form: top view Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 2 Radiant sensitive area (in mm ): 7.5 AEC-Q101 qualified High photo sensitivity Adapted to human eye responsivity Supression filter for near infrared radiation Angle of half sensitivity: = 65 Floor life: 72 h, MSL 4, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS TEMD5510FX01 ambient light sensor is a PIN photodiode with high photo sensitivity in a miniature surface mount Automotive sensors 2 device (SMD). The detector chip has 7.5 mm sensitive area. Ambient light sensors It is sensitive to visible light much like the human eye an d Backlight dimmers has peak sensitivity at 540 nm. Notebooks Computers PRODUCT SUMMARY COMPONENT I (A) () (nm) ra 0.5 TEMD5510FX01 1 65 430 to 610 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5510FX01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view TEMD5510FX01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 16 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile Fig. 5 T 260 C sd Thermal resistance junction-to-ambient JESD51 R 350 K/W thJA Rev. 1.7, 21-May-2019 Document Number: 81293 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD5510FX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 V 16 - - V R (BR) Reverse dark current V = 10 V, E = 0 I - 2 30 nA R ro V = 0 V, f = 1 MHz, E = 0 C - 1600 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C - 730 - pF R D 2 E = 1 mW/cm , = 550 nm, V = 5 V I -26- A e R ra Reverse light current E = 100 lx, CIE illuminant A, V = 5 V I 0.8 1 1.4 A v R ra Temperature coefficient of I E = 100 lx, CIE illuminant A, V = 5 V TK -0.2 - %/K ra v R Ira Angle of half sensitivity - 65 - Wavelength of peak sensitivity - 540 - nm p Range of spectral bandwidth - 430 to 610 - nm 0.5 BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.0 0.8 Photodiode 100 human eye 0.6 0.4 10 0.2 V = 10 V R 1 0.0 20 40 60 80 100 400 600 800 1000 94 8403 T - Ambient Temperature (C) amb Wavelength (nm) 20047 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Relative Spectral Sensitivity vs. Wavelength 0 10 20 1000 30 100 40 1.0 10 0.9 50 0.8 60 CIE Illuminant A 1 70 V = 5 V R 0.7 80 0.1 10 100 1000 10 000 0.6 0.4 0.2 0 94 8406 1 20080 E - Illuminance (lx) v Fig. 2 - Reverse Light Current vs. Irradiance Fig. 4 - Relative Radiant Sensitivity vs. Angular Displacement Rev. 1.7, 21-May-2019 Document Number: 81293 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Photocurrent (A) ra Relative Spectral Sensitivity S - Relative Sensitivity rel - Angular Displacement I - Reverse Dark Current (nA) ro