X-On Electronics has gained recognition as a prominent supplier of Q65110A1202 Photodiodes across the USA, India, Europe, Australia, and various other global locations. Q65110A1202 Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

Q65110A1202 OSRAM

Q65110A1202 electronic component of OSRAM
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Part No.Q65110A1202
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiode PIN Chip 900nm 2-Pin SMR T/R
Datasheet: Q65110A1202 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.9259 ea
Line Total: USD 925.9 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.9259
2000 : USD 0.8139

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 120
Multiples : 1
120 : USD 0.9826
250 : USD 0.9775
500 : USD 0.9722

   
Manufacturer
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Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Power Dissipation
Mounting
Operating Temp Range
Packaging
Pin Count
Polarity
Dark Current Max
Light Current
Photodiode Type
Type
Operating Temperature Classification
Reverse Breakdown Voltage
Lens Type
Photodiode Material
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the Q65110A1202 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q65110A1202 and other electronic components in the Photodiodes category and beyond.

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2011-10-20 Silicon PIN Photodiode in SMR Package Silizium-PIN-Fotodiode in SMR Gehuse Version 1.0 SFH 2500 FA, SFH 2505 FA SFH 2500 FA SFH 2505 FA Features: Besondere Merkmale: Wavelength range (S ) 400 nm to 1100 nm Wellenlngenbereich (S ) 400 nm bis 1100 nm 10% 10% (SFH 2505) and 750nm bis 1100nm (SFH 2505) und 750 nm bis 1100 nm (SFH 2500FA/ SFH 2505FA) (SFH 2500FA/ SFH 2505FA) SMR (Surface Mount Radial) package SMR (Surface Mount Radial) Gehuse Short switching time (typ. 5 ns) Kurze Schaltzeit (typ. 5 ns) Package matched with IRED SFH 4542, SFH 4543, Gehusegleich mit IRED SFH 4542, SFH 4543, SFH 4551, SFH 4580, SFH 4585 SFH 4551, SFH 4580, SFH 4585 Short switching time (typ. 5 ns) Kurze Schaltzeit (typ. 5 ns) Applications Anwendungen Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln Photointerrupters Lichtschranken Data transmission Datenbertragung Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 870 nm, E = 1 mW/cm , V = 5 V e R I [A] P SFH 2500 FA 70 ( 50) Q65110A1202 SFH 2505 FA 70 ( 50) Q65110A1204 2011-10-20 1Version 1.0 SFH 2500 FA, SFH 2505 FA Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T ; T -40 ... 85 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Reverse voltage V 50 V R Sperrspannung (t < 2 min) Total power dissipation P 100 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 70 ( 50) A P Fotostrom 2 (V = 5 V, = 870 nm, E = 1 mW/cm ) R e Wavelength of max. sensitivity 900 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 750 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A1.00 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 1 x 1 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 15 Halbwinkel Dark current I 0.1 ( 5) nA R Dunkelstrom (V = 20 V) R Spectral sensitivity of the chip S 0.55 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 850 nm) 2011-10-20 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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