X-On Electronics has gained recognition as a prominent supplier of Q65110A1211 Phototransistors across the USA, India, Europe, Australia, and various other global locations. Q65110A1211 Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

Q65110A1211 OSRAM

Name: Q65110A1211
Brand: OSRAM
SKU: Q65110A1211_OSRAM
Availability: OutOfStock
Rating: 5 (11 reviews)

Q65110A1211 electronic component of OSRAM

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See Product Specifications

Part No.	Q65110A1211
Manufacturer:	OSRAM
Category:	Phototransistors
Description:	Phototransistor Chip Silicon 570nm 3-Pin DIP SMD T/R
Datasheet:	Q65110A1211 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

87: USD 0.9803 ea
Line Total: USD 85.29

Availability - 0

MOQ: 87 Multiples: 1
Pack Size: 1

Q65110A1211 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 20 Nov to Tue. 26 Nov MOQ : 87 Multiples : 1	87 : USD 0.9803 100 : USD 0.7922 250 : USD 0.7635 500 : USD 0.6608 1000 : USD 0.5479

Specifications

Manufacturer OSRAM OSRAM
Product Category Phototransistors Phototransistors

We are delighted to provide the Q65110A1211 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q65110A1211 and other electronic components in the Phototransistors category and beyond.

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Additional Infomation About Product

2007-04-02 Silicon NPN Phototransistor with V Characteristics NPN-Silizium-Fototransistor mit V -Charakteristik Version 1.0 SFH 3410 Features: Besondere Merkmale: Package: Smart DIL Gehuse: Smart DIL Especially suitable for applications from 350 nm to Speziell geeignet fr Anwendungen im Bereich von 970 nm 350 nm bis 970 nm Adapted to human eye sensitivity (V ) Angepat an die Augenempfindlichkeit (V ) SMT package without base connection, suitable for SMT-Bauform ohne Basisanschlu, geeignet fr IR reflow soldering IR-Reflow-Lten Only available on tape and reel Nur gegurtet lieferbar Applications Anwendungen For control and drive circuits Messen / Steuern / Regeln Exposure meter for daylight and artificial light Beleuchtungssensor Sensor for backlight-dimming Dimmungssensor fr Hintergrundbeleuchtung Ambient light detector Umgebungslichtsensor Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer E = 20 lx, Std. Light A, V = 5 V v CE I A PCE SFH 3410 3.2 ... 25 Q65110A1211 SFH 3410-1/2 3.2 ... 10 Q65110A2653 SFH 3410-2/3 5 ... 16 Q65110A2654 SFH 3410-3/4 8 ... 25 Q65110A2655 2007-04-02 1Version 1.0 SFH 3410 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 5.5 V CE Kollektor-Emitter-Spannung Collector current I 20 mA C Kollektorstrom Emitter-collector voltage V 0.5 V EC Emitter-Kollektor-Spannung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 570 nm S max Wellenlnge der max. Fotoempfindlichkeit 2 Radiant sensitive area A0.29 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 0.75 x 0.75 mm x Abmessung der Chipflche mm Half angle 60 Halbwinkel Capacitance C 3.9 pF CE Kapazitt (V = 0 V, f = 1 MHz, E = 0) CE Photocurrent I > 3.2 A PCE Fotostrom (E = 20 lx, Std. Light A, V = 5 V) v CE Dark current I 3 ( 50) nA CE0 Dunkelstrom (V = 5 V, E = 0) CE 2007-04-02 2

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

AMS OSRAM may also be referenced as

OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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