X-On Electronics has gained recognition as a prominent supplier of Q60215Y1113 Phototransistors across the USA, India, Europe, Australia, and various other global locations. Q60215Y1113 Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

Q60215Y1113 OSRAM

Q60215Y1113 electronic component of OSRAM
Q60215Y1113 OSRAM
Q60215Y1113 Phototransistors
Q60215Y1113  Optoelectronics

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See Product Specifications
Part No. Q60215Y1113
Manufacturer: OSRAM
Category: Phototransistors
Description: Phototransistor Chip Silicon 830nm 3-Pin TO-18
Datasheet: Q60215Y1113 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 1.9752 ea
Line Total: USD 59.26 
Availability - 0
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 30
Multiples : 1
30 : USD 1.9752
50 : USD 1.8665
100 : USD 1.7253

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 28
Multiples : 1
28 : USD 1.9752
50 : USD 1.8665
100 : USD 1.7253

   
Manufacturer
Product Category
Maximum Power Dissipation
Maximum Dark Current
Peak Wavelength
Collector Current Dc Max
Collector-Emitter Voltage
Half-Intensity Angle
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Light Current
Number Of Elements
Operating Temperature Classification
Phototransistor Type
Collector-Emitter Sat Volt Max
Rad Hardened
Collector Current Dc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the Q60215Y1113 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q60215Y1113 and other electronic components in the Phototransistors category and beyond.

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2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 BPY 62 Features: Besondere Merkmale: Spectral range of sensitivity: (typ) 400 ... 1100 Spektraler Bereich der Fotoempfindlichkeit: nm (typ) 400 ... 1100 nm Package: Metal Can (TO-18), hermetically sealed Gehuse: Metall Gehuse (TO-18), hermetisch dicht Special: Base connection Besonderheit: Basisanschluss Suitable up to 125 C Geeignet bis 125 C HIgh photosensitivity Hohe Fotoempfindlichkeit Available in groups Gruppiert lieferbar Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 0.5 mW/cm , V = 5 V e CE I A PCE BPY 62 500 Q60215Y0062 BPY 62-3/4 800 ... 2500 Q62702P5198 BPY 62-4 1250 ... 2500 Q60215Y1113 Note: Only one bin within one packing unit (variation less than 2:1) Anm.: Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1) 2014-01-14 1Version 1.1 BPY 62 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 125 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 35 V CE Kollektor-Emitter-Spannung Collector current I 100 mA C Kollektorstrom Collector surge current I 200 mA CS Kollektorspitzenstrom ( < 10 s) Emitter-collector voltage V 7V EC Emitter-Kollektor-Spannung Total power dissipation P 200 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity 830 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 400 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A0.11 mm Bestrahlungsempfindliche Flche Dimensions of chip area L x W 0.55 x 0.55 mm x Abmessung der Chipflche mm Half angle 8 Halbwinkel Photocurrent of collector-base photodiode I 5.5 A PCB Fotostrom der Kollektor-Basis-Fotodiode 2 ( = 950 nm, E = 0.5 mW/cm , V = 5 V) e CB Photocurrent of collector-base photodiode I 17 A PCB Fotostrom der Kollektor-Basis-Fotodiode (E = 1000 lx, Std. Light A, V = 5 V) V CB 2014-01-14 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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