X-On Electronics has gained recognition as a prominent supplier of Q62702P0084 Photodiodes across the USA, India, Europe, Australia, and various other global locations. Q62702P0084 Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

Q62702P0084 OSRAM

Q62702P0084 electronic component of OSRAM
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Part No.Q62702P0084
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiode PIN Chip 950nm 0.7A/W Sensitivity 2-Pin PDIL
Datasheet: Q62702P0084 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
97: USD 0.6499 ea
Line Total: USD 63.04 
Availability - 0
MOQ: 97  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 17 Sep to Mon. 23 Sep
MOQ : 97
Multiples : 1
97 : USD 0.6499
100 : USD 0.5969

   
Manufacturer
Product Category
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Deleted
Power Dissipation
Pin Count
Reverse Breakdown Voltage
Forward Voltage
Mounting
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Package Type
Type
Polarity
Light Current
Photodiode Type
Responsivity
Photodiode Material
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We are delighted to provide the Q62702P0084 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q62702P0084 and other electronic components in the Photodiodes category and beyond.

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2014-01-17 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BP 104 F Features: Besondere Merkmale: Especially suitable for applications of 950 nm Speziell geeignet fr Anwendungen bei 950 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Photointerrupters Lichtschranken Remote control Fernsteuerung Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BP 104 F 34 ( 25) Q62702P0084 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung 2014-01-17 1Version 1.1 BP 104 F Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 34 ( 25) A P Fotostrom 2 (V = 5 V, E = 1 mW/cm , = 950 nm) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 800 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) Quantum yield of the chip 0.91 Electro Quantenausbeute des Chips ns ( = 950 nm) /Photon Open-circuit voltage V 330 ( 250) mV O Leerlaufspannung 2 (E = 0.5 mW/cm , = 950 nm) e Short-circuit current I 17 A SC Kurzschlussstrom 2 (E = 0.5 mW/cm , = 950 nm) e Rise and fall time t , t 0.02 s r f Anstiegs- und Abfallzeit (R = 50 V = 5 V = 850 nm I = 800 A) L R p Forward voltage V 1.3 V F Durchlassspannung (I = 100 mA, E = 0) F 2014-01-17 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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