X-On Electronics has gained recognition as a prominent supplier of BPW 34 F Photodiodes across the USA, India, Europe, Australia, and various other global locations. BPW 34 F Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BPW 34 F OSRAM

BPW 34 F electronic component of OSRAM
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Part No.BPW 34 F
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiode; DIL; 950nm; 780-1100nm; 60°; Mounting: THT; 2nA; 150mW
Datasheet: BPW 34 F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 4000
Multiples : 1000
4000 : USD 0.4016
40000 : USD 0.3949
400000 : USD 0.355
2000000 : USD 0.3314
4000000 : USD 0.3311
N/A

Obsolete
0
MOQ : 4000
Multiples : 4000
4000 : USD 0.4015
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.0034
10 : USD 0.8687
100 : USD 0.446
500 : USD 0.4007
1000 : USD 0.3423
2000 : USD 0.3197
10000 : USD 0.3197
25000 : USD 0.3186
50000 : USD 0.3067
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9337
5 : USD 0.54
13 : USD 0.4536
60 : USD 0.4331
N/A

Obsolete
0
MOQ : 20
Multiples : 1
20 : USD 1.2138
25 : USD 0.8713
100 : USD 0.7652
250 : USD 0.6713
500 : USD 0.5107
1000 : USD 0.4105
N/A

Obsolete
   
Manufacturer
Product Category
Dark Current
Mounting
Case
Led Lens
Type Of Photodetector
Turn-On Time
Turn-Off Time
Wavelength Of Peak Sensitivity
Viewing Angle
Active Area
Max Off-State Voltage
Optical Power
Wavelength
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BPW 34 F from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPW 34 F and other electronic components in the Photodiodes category and beyond.

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2014-01-10 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 F Features: Besondere Merkmale: Especially suitable for the wavelength range of Speziell geeignet fr den Wellenlngenbereich von 780 nm to 1100 nm 780 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Automotive (eg rain sensor, headset) Automotomobil (z.B. Regensensor, Headset) IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Photointerrupters Lichtschranken Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BPW 34 F 50 ( 40) Q62702P0929 2014-01-10 1Version 1.1 BPW 34 F Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 16 V R Sperrspannung Reverse voltage V 32 V R Sperrspannung (t < 2 min) Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 50 ( 40) A P Fotostrom 2 (V = 5 V, = 950 nm, E =1 mW/cm ) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 780 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A7.02 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.65 x 2.65 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) 2014-01-10 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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