X-On Electronics has gained recognition as a prominent supplier of Q62702P0073 Photodiodes across the USA, India, Europe, Australia, and various other global locations. Q62702P0073 Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

Q62702P0073 OSRAM

Q62702P0073 electronic component of OSRAM
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Part No.Q62702P0073
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin DILP
Datasheet: Q62702P0073 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
81: USD 0.7151 ea
Line Total: USD 57.92 
Availability - 0
MOQ: 81  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 81
Multiples : 1
81 : USD 0.7151
100 : USD 0.6568

   
Manufacturer
Product Category
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Type
Reverse Breakdown Voltage
Photodiode Material
Forward Voltage
Responsivity
Photodiode Type
Rad Hardened
Light Current
Operating Temperature Classification
Mounting
Operating Temp Range
Pin Count
Polarity
Power Dissipation
Package Type
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We are delighted to provide the Q62702P0073 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q62702P0073 and other electronic components in the Photodiodes category and beyond.

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2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 BPW 34 Features: Besondere Merkmale: Especially suitable for applications from 400 nm to Speziell geeignet fr Anwendungen im Bereich von 1100 nm 400 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer E = 1000 lx, Std. Light A, V = 5 V v R I A P BPW 34 80 ( 50) Q62702P0073 2014-01-10 1Version 1.1 BPW 34 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 32 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Spectral sensitivity S80 nA/Ix Fotoempfindlichkeit (V = 5 V, standard light A, T = 2856 K) R Photocurrent I 80 ( 50) A P Fotostrom (E = 1000 lx, Std. Light A, V = 5 V) v R Wavelength of max. sensitivity 850 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 400 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A7.02 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.65 x 2.65 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.62 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 850 nm) 2014-01-10 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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