X-On Electronics has gained recognition as a prominent supplier of Q62702-P0016-S004 Phototransistors across the USA, India, Europe, Australia, and various other global locations. Q62702-P0016-S004 Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

Q62702-P0016-S004 OSRAM

Name: Q62702-P0016-S004
Brand: OSRAM
SKU: Q62702P0016S004_OSRAM
Availability: OutOfStock
Rating: 5 (11 reviews)

Q62702-P0016-S004 electronic component of OSRAM

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See Product Specifications

Part No.	Q62702-P0016-S004
Manufacturer:	OSRAM
Category:	Phototransistors
Description:	Phototransistor Chip Silicon 880nm 3-Pin TO-18
Datasheet:	Q62702-P0016-S004 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

29: USD 2.0355 ea
Line Total: USD 59.03

Availability - 0

MOQ: 29 Multiples: 1
Pack Size: 1

Q62702-P0016-S004 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 29 Multiples : 1	29 : USD 2.0355 50 : USD 1.9234 100 : USD 1.778

Specifications

Manufacturer OSRAM OSRAM
Product Category Phototransistors Phototransistors
Maximum Power Dissipation 0.22 W 0.22 W
Peak Wavelength 880 nm 880 nm
Rise Time 15000 ns 15000 ns
Fall Time 15000 ns 15000 ns
Collector Current Dc 0.05 A 0.05 A
Collector-Emitter Voltage 50 V 50 V
Half-Intensity Angle 30(Deg) 30(Deg)
Operating Temp Range - 40 C to 125 C - 40 C to 125 C
Polarity Npn Npn
Light Current 9500 uA 9500 uA
Number Of Elements 1 1
Operating Temperature Classification automotive automotive
Phototransistor Type Phototransistor Phototransistor
Collector-Emitter Sat Volt Max 0.24(V) 0.24(V)
Rad Hardened No No
Mounting Through Hole Through Hole
Package Type TO - 18 TO - 18
Pin Count 3 3

We are delighted to provide the Q62702-P0016-S004 from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Q62702-P0016-S004 and other electronic components in the Phototransistors category and beyond.

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Additional Infomation About Product

2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 BPX 43 Features: Besondere Merkmale: Spectral range of sensitivity: (typ) 450 ... 1100 Spektraler Bereich der Fotoempfindlichkeit: nm (typ) 450 ... 1100 nm Package: Metal Can (TO-18), hermetically sealed Gehuse: Metall Gehuse (TO-18), hermetisch dicht Special: Base connection Besonderheit: Basisanschluss Suitable up to 125C Geeignet bis zu 125C High linearity Hohe Linearitt Available in groups Gruppiert lieferbar Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln 2014-01-14 1Version 1.1 BPX 43 Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 0.5 mW/cm , V = 5 V e CE I A PCE BPX 43 800 Q62702P0016 BPX 43-3/4 1250 ... 4000 Q62702P3581 BPX 43-4 2000 ... 4000 Q62702P0016S004 BPX 43-4/5 2000 Q62702P3582 BPX 43-5 3200 Q62702P0016S005 Note: Only one bin within one packing unit (variation less than 2:1) Anm.: Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1) Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 125 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 50 V CE Kollektor-Emitter-Spannung Collector current I 50 mA C Kollektorstrom Collector surge current I 200 mA CS Kollektorspitzenstrom ( < 10 s) Emitter-base voltage V 7V EB Emitter-Basis-Spannung Total power dissipation P 220 mW tot Verlustleistung Thermal resistance R 450 K / W thJA Wrmewiderstand 2014-01-14 2

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

AMS OSRAM may also be referenced as

OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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