X-On Electronics has gained recognition as a prominent supplier of VB30100S-E3/8W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VB30100S-E3/8W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VB30100S-E3/8W Vishay

VB30100S-E3/8W electronic component of Vishay
VB30100S-E3/8W Vishay
VB30100S-E3/8W Schottky Diodes & Rectifiers
VB30100S-E3/8W  Semiconductors

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Part No. VB30100S-E3/8W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30 Amp 100 Volt Single TrenchMOS
Datasheet: VB30100S-E3/8W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8379 ea
Line Total: USD 1.84 
Availability - 736
Ship by Thu. 17 Apr to Tue. 22 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
736
Ship by Thu. 17 Apr to Tue. 22 Apr
MOQ : 1
Multiples : 1
1 : USD 1.8379
10 : USD 1.5482
30 : USD 1.0723
100 : USD 0.8337
500 : USD 0.7718
800 : USD 0.7456

3589
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 1.7
10 : USD 1.416
100 : USD 1.177
250 : USD 1.0747
500 : USD 0.8932
800 : USD 0.8503
4800 : USD 0.8393

1552
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 800
Multiples : 800
800 : USD 1.4103

15520
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 8000
Multiples : 8000
8000 : USD 0.7848
16000 : USD 0.7769
24000 : USD 0.7691
40000 : USD 0.7614
48000 : USD 0.7539
200000 : USD 0.7463

754
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 60
Multiples : 1
60 : USD 1.0886
60 : USD 1.0777
100 : USD 1.0322
250 : USD 1.0218
500 : USD 0.7926

7760
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 8000
Multiples : 8000
8000 : USD 1.4456

   
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We are delighted to provide the VB30100S-E3/8W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VB30100S-E3/8W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.39 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum 3 3 2 peak of 245 C (for TO-263AB package) 2 1 1 V30100S VF30100S Solder bath temperature 275 C maximum, 10 s, per PIN 1 PIN 1 PIN 2 PIN 2 JESD 22-B106 (for TO-220AB, ITO-220AB, and CASE PIN 3 PIN 3 TO-262AA package) 2 D PAK (TO-263AB) TO-262AA Material categorization: for definitions of compliance K please see www.vishay.com/doc 99912 K TYPICAL APPLICATIONS For use in high frequency converters, switching power A supplies, freewheeling diodes, OR-ing diode, DC/DC NC 3 2 converters and reverse battery protection. VB30100S VI30100S 1 PIN 1 NC K PIN 2 MECHANICAL DATA A HEATSINK K PIN 3 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and click logo to get started TO-262AA DESIGN SUPPORT TOOLS Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Models Available Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 30 A F(AV) Mounting Torque: 10 in-lbs maximum V 100 V RRM I 250 A FSM V at I = 30 A 0.69 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB),TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100S VF30100S VB30100S VI30100S UNIT Maximum repetitive peak reverse voltage V 100 V RRM Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half I 250 A FSM sine-wave superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 90 mH E 230 mJ J AS Peak repetitive reverse current I 1.0 A RRM at t = 2 s, 1 kHz, T = 38 C 2 C p J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink V 1500 V AC t = 1 min Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88941 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 105 (minimum) - V R A BR I = 5 A 0.47 - F I = 10 A T = 25 C 0.55 - F A I = 30 A 0.80 0.91 F (1) Instantaneous forward voltage V V F I = 5 A 0.39 - F I = 10 A T = 125 C 0.49 - F A I = 30 A 0.69 0.78 F T = 25 C 27 - A A V = 70 V R T = 125 C 11 - mA A (2) Reverse current I R T = 25 C 70 1000 A A V = 100 V R T = 125 C 23 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100SVF30100SVB30100SVI30100SUNIT Typical thermal resistance R 2.0 4.0 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30100S-E3/4W 1.875 4W 50/tube Tube ITO-220AB VF30100S-E3/4W 1.805 4W 50/tube Tube TO-263AB VB30100S-E3/4W 1.380 4W 50/tube Tube TO-263AB VB30100S-E3/8W 1.380 8W 800/reel Tape and reel TO-262AA VI30100S-E3/4W 1.455 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 32 D = 0.5 D = 0.8 Resistive or Inductive Load 28 D = 0.3 30 V(B,I)30100S D = 0.2 24 25 D = 1.0 D = 0.1 VF30100S 20 20 16 15 12 T 10 8 5 Mounted on Specific Heat sink 4 D = t /T t p p 0 0 0 4 8 12162024283236 0 25 50 75 100 125 150 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 18-Jun-2018 Document Number: 88941 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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