V60200PGW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.54 V at I = 5 A F F FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS TO-3PW For use in high frequency converters, switching power PIN 1 PIN 2 supplies, freewheeling diodes, OR-ing diode, DC/DC CASE PIN 3 converters and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating I 2 x 30 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 200 V RRM commercial grade I 300 A FSM Terminals: Matte tin plated leads, solderable per E at L = 60 mH 150 mJ AS J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test V at I = 30 A 0.77 V F F Polarity: As marked T max. 150 C J Mounting Torque: 10 in-lbs maximum Package TO-3PW Diode variations Dual common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60200PGW UNIT Maximum repetitive peak reverse voltage V 200 V RRM per device 60 Maximum average forward rectified curret (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 300 A FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 150 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p 0.5 A I RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 20-Dec-13 Document Number: 89184 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V60200PGW www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 200 (minimum) - V R A BR I = 10 A 0.69 - F I = 15 A T = 25 C 0.90 - F A I = 30 A 1.28 1.48 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.54 - F I = 15 A T = 125 C 0.66 - F A I = 30 A 0.77 0.85 F T = 25 C 3.4 - A A V = 180 V R T = 125 C 4.6 - mA A (2) Reverse current per diode I R T = 25 C - 210 A A V = 200 V R T = 125 C 7.5 27 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60200PGW UNIT per diode 1.5 Typical thermal resistance R C/W JC per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW V60200PGW-M3/4W 4.5 4W 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 32 Resistive or Inductive Load D = 0.8 28 60 D = 0.5 D = 0.3 24 50 D = 1.0 20 D = 0.2 40 16 D = 0.1 30 T 12 20 8 D = t /T t 10 4 p p Mounted on Specific Heat sink 0 0 025 50 75 100 125 150 0 4 8 12 16 20 24 28 32 36 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 20-Dec-13 Document Number: 89184 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)