V20100C, VI20100C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.50 V at I = 5 A F F FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses TO-220AB TO-262AA High efficiency operation K Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 3 2 2 1 1 TYPICAL APPLICATIONS V20100C VI20100C For use in high frequency DC/DC converters, switching PIN 1 PIN 1 PIN 2 PIN 2 power supplies, freewheeling diodes, OR-ing diode, and PIN 3 CASE PIN 3 K reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 10 A Base P/N-M3 - halogen-free, RoHS-compliant, and F(AV) commercial grade V 100 V RRM Base P/NHM3 - halogen-free, RoHS-compliant, and I 150 A FSM AEC-Q101 qualified V at I = 10 A 0.58 V F F Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package TO-220AB, TO-262AA M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix Diode variation Common cathode meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20100C VI20100C UNIT Max. repetitive peak reverse voltage V 100 V RRM per device 20 Max. average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half I 150 A FSM sine-wave superimposed on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 13-Dec-16 Document Number: 89161 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V20100C, VI20100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.55 - F T = 25 C A I = 10 A 0.65 0.79 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.50 - F T = 125 C A I = 10 A 0.58 0.68 F T = 25 C 17 - A A V = 70 V R T = 125 C 5.3 - mA A (2) Reverse current per diode I R T = 25 C - 800 A A V = 100 V R T = 125 C 12 25 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20100CVI20100CUNIT Typical thermal resistance per diode R 2.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20100C-M3/4W 1.881 4W 50/tube Tube TO-262AA VI20100C-M3/4W 1.45 4W 50/tube Tube (1) TO-220AB V20100CHM3/4W 1.881 4W 50/tube Tube (1) TO-262AA VI20100CHM3/4W 1.45 4W 50/tube Tube Note (1) AEC-Q101 qualified Revision: 13-Dec-16 Document Number: 89161 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000