V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.50 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per 3 3 2 JESD 22-B106 (for TO-220AB, ITO-220AB, and 2 1 1 TO-262AA package) V20120S VF20120S PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance CASE please see www.vishay.com/doc 99912 PIN 3 PIN 3 2 D PAK (TO-263AB) TO-262AA TYPICAL APPLICATIONS K For use in high frequency converters, switching power K supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A MECHANICAL DATA 2 3 NC Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and 2 1 TO-262AA VB20120S VI20120S PIN 1 NC K PIN 2 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade HEATSINK A K PIN 3 Terminals: matte tin plated leads, solderable per click logo to get started DESIGN SUPPORT TOOLS J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Models Available Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS I 20 A F(AV) V 120 V RRM I 200 A FSM V at I = 20 A 0.73 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT Maximum repetitive peak reverse voltage V 120 V RRM Maximum average forward rectified current (fig. 1) I 20 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 130 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p I 0.5 A RRM T = 38 C 2 C J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88993 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 120 (minimum) - V R A BR I = 5 A 0.57 - F I = 10 A T = 25 C 0.71 - F A I = 20 A 0.99 1.12 F Instantaneous forward voltage (1) V V F per diode I = 5 A 0.50 - F I = 10 A T = 125 C 0.61 - F A I = 20 A 0.73 0.81 F T = 25 C 10 - A A V = 90 V R T = 125 C 6 - mA A (2) Reverse current per diode I R T = 25 C - 300 A A V = 120 V R T = 125 C 14 30 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20120SVF20120SVB20120SVI20120SUNIT Typical thermal resistance R 24 22 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20120S-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20120S-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20120S-E3/4W 1.38 4W 50/tube Tube TO-263AB VB20120S-E3/8W 1.38 8W 800/reel Tape and reel TO-262AA VI20120S-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 20 D = 0.8 D = 0.5 Resistive or Inductive Load 18 D = 0.3 20 16 V(B,I)20120S 14 D = 0.2 15 12 VF20120S D = 1.0 D = 0.1 10 10 8 T 6 5 4 2 D = t /T t p p Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 18-Jun-2018 Document Number: 88993 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)