V3PAN50-M3 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES Very low profile - typical height of 0.95 mm eSMP Series Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak Top View Bottom View of 260 C SMPA (DO-221BC) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Anode Cathode TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, click logo to get started freewheeling, DC/DC converters, and polarity protection DESIGN SUPPORT TOOLS applications. Models MECHANICAL DATA Available Case: SMPA (DO-221BC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and PRIMARY CHARACTERISTICS commercial grade I 3.0 A F(AV) Terminals: matte tin plated leads, solderable per V 50 V RRM J-STD-002 and JESD22-B102 I 80 A FSM M3 suffix meets JESD 201 class 2 whisker test V at I = 3.0 A (T = 125 C) 0.40 V F F A Polarity: Color band denotes cathode end T max. 150 C J Package SMPA (DO-221BC) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V3PAN50 UNIT Device marking code 3N5 Maximum repetitive peak reverse voltage V 50 V RRM (1) Maximum DC forward current I 3.0 A F Maximum DC reverse voltage V 35 V DC Peak forward surge current 10 ms single half sine-wave I 80 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Note (1) Free air, mounted on recommended copper pad area Revision: 13-Feb-2019 Document Number: 87909 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V3PAN50-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.5 A 0.40 - F T = 25 C A I = 3.0 A 0.47 0.54 F (1) Instantaneous forward voltage V V F I = 1.5 A 0.30 - F T = 125 C A I = 3.0 A 0.40 0.48 F T = 25 C 8- A A V = 35 V R T = 125 C 8.8 - mA A (2) Reverse current I R T = 25 C - 600 A A V = 50 V R T = 125 C 12 35 mA A Typical junction capacitance 4.0 V, 1 MHz C 480 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V3PAN50 UNIT (1) R 100 JA Typical thermal resistance C/W (1) R 9 JM Note (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V3PAN50-M3/I 0.032 I 14 000 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise specified) A 1.6 3.2 T = 138 C, R = 9 C/W D = 0.8 D = 0.5 M thJM 1.4 D = 0.3 2.8 D = 0.2 1.2 2.4 D = 1.0 D = 0.1 1 2 T = 25 C A R = 100 C/W 0.8 thJA 1.6 0.6 T 1.2 0.4 0.8 D = t /T t p p 0.4 T measured at cathode band 0.2 M terminal PCB mount 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 0 25 50 75 100 125 150 Case Temperature (C) (D=duty cycle=0.5) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 13-Feb-2019 Document Number: 87909 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)