V40170C-M3/4W Vishay

V40170C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.52 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3 2 For use in high frequency DC/DC converters, switching 1 power supplies, freewheeling diodes, OR-ing diode, and V40170C reverse battery protection. PIN 1 PIN 2 PIN 3 CASE MECHANICAL DATA Case: TO-220AB PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 20 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 170 V commercial grade RRM I 200 A FSM Terminals: matte tin plated leads, solderable per V at I = 20 A 0.68 V J-STD-002 and JESD 22-B102 F F M3 suffix meets JESD 201 class 1A whisker test T max. 175 C J Package TO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40170C UNIT Maximum repetitive peak reverse voltage V 170 V RRM per device 40 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 20 Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.66 - F I = 10 A T = 25 C 0.75 - F A I = 20 A 0.86 1.20 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.52 - F I = 10 A T = 125 C 0.59 - F A I = 20 A 0.68 0.76 F T = 25 C 1.3 - A A V = 136 V R T = 125 C 2.2 - mA A (2) Reverse current per diode I R T = 25 C - 250 A A V = 170 V R T = 125 C 4.2 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms Revision: 01-Dec-16 Document Number: 89941 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40170C-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40170C UNIT per diode 1.2 Typical thermal resistance R C/W JC per device 0.85 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40170C-M3/4W 1.85 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 22 100 20 T = 175 C A 18 16 T = 150 C 10 A 14 12 T = 125 C A 10 8 T = 100 C A 1 6 4 T = 25 C 2 A 0 0.1 0 25 50 75 100 125 150 175 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 20.0 T = 175 C D = 0.8 A D = 0.5 10 D = 0.3 D = 0.2 T = 150 C A 15.0 D = 0.1 1 D = 1.0 T = 125 C A T = 100 C A 0.1 10.0 0.01 T 5.0 0.001 D = t /T t p p T = 25 C A 0.0001 0.0 20 40 60 80 100 0 5 10 15 20 25 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 01-Dec-16 Document Number: 89941 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current (mA)