V60170PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.52 V at I = 10 A F F FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS TO-3PW For use in high frequency DC/DC converters, switching PIN 1 PIN 2 power supplies, freewheeling diodes, OR-ing diode, and CASE PIN 3 reverse battery protection. MECHANICAL DATA Case: TO-3PW PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and I 2 x 30 A F(AV) commercial grade V 170 V RRM Terminals: Matte tin plated leads, solderable per I 260 A FSM J-STD-002 and JESD 22-B102 V at I = 30 A 0.65 V F F M3 suffix meets JESD 201 class 1A whisker test T max. 175 C J Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60170PW UNIT Maximum repetitive peak reverse voltage V 170 V RRM per device 60 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 260 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T - 40 to + 175 C J STG Revision: 20-Nov-12 Document Number: 89944 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V60170PW www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 10 A 0.66 - F I = 15 A T = 25 C 0.72 - F A I = 30 A 0.80 0.93 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.52 - F I = 15 A T = 125 C 0.56 - F A I = 30 A 0.65 0.73 F T = 25 C 2.6 - A A V = 136 V R T = 125 C 3.2 - mA A (2) Reverse current per diode I R T = 25 C - 500 A A V = 170 V R T = 125 C 6.2 60 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60170PWUNIT per diode 0.9 Typical thermal resistance R C/W JC per device 0.6 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW V60170PW-M3/4W 4.5 4W 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 32 30.0 D = 0.8 D = 0.5 28 25.0 D = 0.3 24 D = 0.2 20.0 D = 1.0 20 D = 0.1 15.0 16 12 10.0 T 8 5.0 4 D = t /T t p p 0 0.0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 20-Nov-12 Document Number: 89944 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)