X-On Electronics has gained recognition as a prominent supplier of VB10150C-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VB10150C-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VB10150C-E3/4W Vishay

VB10150C-E3/4W electronic component of Vishay
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Part No.VB10150C-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10 Amp 150 Volt Dual TrenchMOS
Datasheet: VB10150C-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.5934 ea
Line Total: USD 4747.2 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.5934

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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We are delighted to provide the VB10150C-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VB10150C-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.63 V at I = 3 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 Solder bath temperature 275 C maximum, 10 s, 3 2 2 1 per JESD 22-B106 (for TO-220AB, ITO-220AB and 1 V10150C VF10150C TO-262AA package) PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance CASE PIN 3 PIN 3 please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 MECHANICAL DATA 1 3 2 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and VB10150C VI10150C 1 TO-262AA PIN 1 K PIN 1 PIN 2 Molding compound meets UL 94 V-0 flammability rating PIN 3 K PIN 2 HEATSINK Base P/N-E3 - RoHS compliant, commercial grade click logo to get started DESIGN SUPPORT TOOLS Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available Polarity: as marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS I 2 x 5.0 A F(AV) V 150 V RRM I 60 A FSM V at I = 5 A 0.69 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10150C VF10150C VB10150C VI10150C UNIT Max. repetitive peak reverse voltage V 150 V RRM per device 10 Max. average forward rectified current (fig. 1) I A F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 60 A FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 23 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 0.5 A RRM per diode Voltage rate of change (rated V) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89068 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 150 (min.) - V R A BR I = 3 A 0.82 - F T = 25 C A I = 5 A 0.99 1.41 F (1) Instantaneous forward voltage per diode V V F I = 3 A 0.63 - F T = 125 C A I = 5 A 0.69 0.75 F T = 25 C 0.5 - A A V = 100 V R T = 125 C 0.5 - mA A (2) Reverse current per diode I R T = 25 C - 100 A A V = 150 V R T = 125 C 1.0 10 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10150C VF10150C VB10150C VI10150C UNIT Typical thermal resistance per diode R 4.0 6.5 4.0 4.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V10150C-E3/4W 1.87 4W 50/tube Tube ITO-220AB VF10150C-E3/4W 1.74 4W 50/tube Tube TO-263AB VB10150C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB10150C-E3/8W 1.38 8W 800/reel Tape and reel TO-262AA VI10150C-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 5 D = 0.8 Resistive or Inductive Load D = 0.5 V(B,I)10150C 10 D = 0.3 4 D = 0.2 8 VF10150C 3 D = 1.0 6 D = 0.1 2 4 T 1 2 D = t /T t Mounted on Specific Heatsink p p 0 0 01 2 3 4 5 6 0 25 50 75 100 125 150 175 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89068 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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