VB10150S-E38W Vishay

V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.59 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, 3 3 2 2 per JESD 22-B106 (for TO-220AB, ITO-220AB, 1 1 V10150S VF10150S and TO-262AA package) PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 CASE PIN 3 PIN 3 TYPICAL APPLICATIONS 2 D PAK (TO-263AB) TO-262AA For use in high frequency converters, switching power K K supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA A 2 NC Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and 3 2 TO-262AA 1 VB10150S VI10150S Molding compound meets UL 94 V-0 flammability rating PIN 1 NC K PIN 2 Base P/N-E3 - RoHS-compliant, commercial grade K A HEATSINK PIN 3 Terminals: matte tin plated leads, solderable per click logo to get started DESIGN SUPPORT TOOLS J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Polarity: as marked Available Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS I 10 A F(AV) V 150 V RRM I 120 A FSM V at I = 10 A 0.69 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10150S VF10150S VB10150S VI10150S UNIT Max. repetitive peak reverse voltage V 150 V RRM Max. average forward rectified current (fig. 1) I 10 A F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed I 120 A FSM on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 70 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 0.5 A p J RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89058 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V10150S-E3, VF10150S-E3, VB10150S-E3, VI10150S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 150 (min.) - V R A BR I = 5 A 0.79 - F T = 25 C A I = 10 A 1.05 1.20 F (1) Instantaneous forward voltage V V F I = 5 A 0.59 - F T = 125 C A I = 10 A 0.69 0.75 F T = 25 C 1.3 - A A V = 100 V R T = 125 C 1.2 - mA A (2) Reverse current I R T = 25 C - 150 A A V = 150 V R T = 125 C 3 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV10150SVF10150SVB10150SVI10150SUNIT Typical thermal resistance R 2.0 4.0 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V10150S-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF10150S-E3/4W 1.75 4W 50/tube Tube TO-263AB VB10150S-E3/4W 1.37 4W 50/tube Tube TO-263AB VB10150S-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VI10150S-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 12 10 D = 0.8 Resistive or Inductive Load D = 0.5 V(B,I)10150S 10 D = 0.3 8 D = 0.2 8 VF10150S 6 D = 1.0 6 D = 0.1 4 4 T 2 2 D = t /T t Mounted on Specific Heatsink p p 0 0 02 4 6 8 10 12 0 25 50 75 100 125 150 175 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 18-Jun-2018 Document Number: 89058 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)