VB10170C-E3/4W Vishay

VB10170C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.57 V at I = 2.5 A F F FEATURES TMBS Trench MOS Schottky technology 2 D PAK (TO-263AB) Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum Available peak of 245 C 2 Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 VB10170C PIN 1 K TYPICAL APPLICATIONS PIN 2 HEATSINK For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and click logo to get started DESIGN SUPPORT TOOLS reverse battery protection. Models MECHANICAL DATA Available 2 Case: D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 2 x 5 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 170 V RRM commercial grade I 80 A FSM Terminals: matte tin plated leads, solderable per V at I = 5.0 A 0.65 V F F J-STD-002 and JESD 22-B102 T max. 175 C E3 and M3 suffix meet JESD 201 class 2 whisker test J 2 Package D PAK (TO-263AB) Polarity: as marked Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB10170C UNIT Maximum repetitive peak reverse voltage V 170 V RRM per device 10 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 5 Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 19-Jun-2018 Document Number: 89948 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VB10170C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.74 - F T = 25 C A I = 5.0 A 0.84 1.03 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.57 - F T = 125 C A I = 5.0 A 0.65 0.74 F T = 25 C 0.3 - A A V = 136 V R T = 125 C 0.9 - mA A (2) Reverse current per diode I R T = 25 C - 90 A A V = 170 V R T = 125 C 1.3 10 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VB10170CUNIT per diode 3.0 Typical thermal resistance R C/W JC per device 1.7 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB10170C-E3/4W 1.38 4W 50/tube Tube TO-263AB VB10170C-E3/8W 1.38 8W 800/reel Tape and reel TO-263AB VB10170C-M3/I 1.38 I 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 6 4.4 D = 0.8 D = 0.5 4.0 Rth =Rth J-A J-C D = 0.3 5 3.6 D = 0.2 3.2 D = 0.1 D = 1.0 4 2.8 2.4 3 2.0 1.6 2 T 1.2 0.8 1 0.4 D = t /T p t p 0 0.0 0 25 50 75 100 125 150 175 0123456 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 89948 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)