X-On Electronics has gained recognition as a prominent supplier of VB20200G-E34W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VB20200G-E34W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VB20200G-E34W Vishay

VB20200G-E34W electronic component of Vishay
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Part No.VB20200G-E34W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Vishay Schottky Diodes & Rectifiers 20 Amp 200 Volt Dual 110 Amp IFSM
Datasheet: VB20200G-E34W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.694 ea
Line Total: USD 1.69 
Availability - 7270
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7270
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.694
10 : USD 0.9658
100 : USD 0.8921
250 : USD 0.8162
500 : USD 0.7491
1000 : USD 0.726
2000 : USD 0.6974

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Factory Pack Quantity :
Tradename
Height
Length
Operating Temperature Range
Type
Width
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We are delighted to provide the VB20200G-E34W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VB20200G-E34W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.62 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 1 Solder bath temperature 275 C maximum, 10 s, per V20200G 1 VF20200G JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA PIN 1 PIN 1 PIN 2 PIN 2 package) CASE PIN 3 PIN 3 Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 D PAK (TO-263AB) TO-262AA K TYPICAL APPLICATIONS K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters and reverse battery protection. 3 1 2 MECHANICAL DATA 1 VB20200G VI20200G 2 PIN 1 K PIN 1 PIN 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and TO-262AA PIN 2 PIN 3 K HEATSINK Molding compound meets UL 94 V-0 flammability rating click logo to get started DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS compliant, commercial grade Terminals: matte tin plated leads, solderable per Models J-STD-002 and JESD 22-B102 Available E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs max. I 2 x 10 A F(AV) V 200 V RRM I 110 A FSM V at I = 10 A 0.71 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT Max. repetitive peak reverse voltage V 200 V RRM per device 20 Max. average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed I 110 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 60 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 0.5 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89117 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 200 (min.) - V R J BR I = 5 A 0.86 - F T = 25 C J I = 10 A 1.23 1.70 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.62 - F T = 125 C J I = 10 A 0.71 0.80 F T = 25 C 1.9 - A J V = 180 V R T = 125 C 1.6 - mA J (2) Reverse current per diode I R T = 25 C - 150 A J V = 200 V R T = 125 C 2.5 15 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT Typical thermal resistance per diode R 3.2 5.5 3.2 3.2 C/W JC ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20200G-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20200G-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20200G-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20200G-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20200G-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 9 D = 0.8 D = 0.5 Resistive or Inductive Load 8 D = 0.3 D = 0.2 V(B,I)20200G 20 7 D = 0.1 6 D = 1.0 15 5 VF20200G 4 10 T 3 2 5 1 D = t /T t p p 0 0 0725 505 100 125 150175 062841012 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89117 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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