V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.39 V at I = 5 A
F F
FEATURES
TMBS
TO-220AB ITO-220AB
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
3
3
2
peak of 245 C (for TO-263AB package)
2
1
1
V30100S VF30100S
Solder bath temperature 275 C maximum, 10 s, per
PIN 1 PIN 1
PIN 2 PIN 2
JESD 22-B106 (for TO-220AB, ITO-220AB, and
CASE
PIN 3 PIN 3
TO-262AA package)
2
D PAK (TO-263AB)
TO-262AA Material categorization: for definitions of compliance
K
please see www.vishay.com/doc?99912
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
A
supplies, freewheeling diodes, OR-ing diode, DC/DC
NC 3
2
converters and reverse battery protection.
VB30100S VI30100S
1
PIN 1
NC K
PIN 2
MECHANICAL DATA
A HEATSINK K
PIN 3
2
Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and
click logo to get started TO-262AA
DESIGN SUPPORT TOOLS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Models
Available
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
Polarity: as marked
I 30 A
F(AV)
Mounting Torque: 10 in-lbs maximum
V 100 V
RRM
I 250 A
FSM
V at I = 30 A 0.69 V
F F
T max. 150 C
J
TO-220AB, ITO-220AB,
Package
2
D PAK (TO-263AB),TO-262AA
Circuit configuration Single
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V30100S VF30100S VB30100S VI30100S UNIT
Maximum repetitive peak reverse voltage V 100 V
RRM
Maximum average forward rectified current (fig. 1) I 30 A
F(AV)
Peak forward surge current 8.3 ms single half
I 250 A
FSM
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T = 25 C, L = 90 mH E 230 mJ
J AS
Peak repetitive reverse current
I 1.0 A
RRM
at t = 2 s, 1 kHz, T = 38 C 2 C
p J
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Isolation voltage (ITO-220AB only) from terminal to heatsink
V 1500 V
AC
t = 1 min
Operating junction and storage temperature range T , T -40 to +150 C
J STG
Revision: 18-Jun-2018 Document Number: 88941
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I = 10 mA T = 25 C V 105 (minimum) - V
R A BR
I = 5 A 0.47 -
F
I = 10 A T = 25 C 0.55 -
F A
I = 30 A 0.80 0.91
F
(1)
Instantaneous forward voltage V V
F
I = 5 A 0.39 -
F
I = 10 A T = 125 C 0.49 -
F A
I = 30 A 0.69 0.78
F
T = 25 C 27 - A
A
V = 70 V
R
T = 125 C 11 - mA
A
(2)
Reverse current I
R
T = 25 C 70 1000 A
A
V = 100 V
R
T = 125 C 23 45 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V30100SVF30100SVB30100SVI30100SUNIT
Typical thermal resistance R 2.0 4.0 2.0 2.0 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V30100S-E3/4W 1.875 4W 50/tube Tube
ITO-220AB VF30100S-E3/4W 1.805 4W 50/tube Tube
TO-263AB VB30100S-E3/4W 1.380 4W 50/tube Tube
TO-263AB VB30100S-E3/8W 1.380 8W 800/reel Tape and reel
TO-262AA VI30100S-E3/4W 1.455 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
35 32
D = 0.5 D = 0.8
Resistive or Inductive Load
28
D = 0.3
30
V(B,I)30100S
D = 0.2
24
25
D = 1.0
D = 0.1
VF30100S
20
20
16
15
12
T
10
8
5 Mounted on Specific Heat sink
4
D = t /T t
p p
0 0
0 4 8 12162024283236
0 25 50 75 100 125 150
Case Temperature (C) Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018 Document Number: 88941
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Average Power Loss (W)