V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.50 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Low forward voltage drop, low power losses 3 3 High efficiency operation 2 2 1 1 Solder bath temperature 275 C maximum 10 s, per V20100C VF20100C JESD 22-B106 (for TO-220AB, ITO-220AB, and PIN 1 PIN 1 PIN 2 PIN 2 TO-262AA package) PIN 3 CASE PIN 3 Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 D PAK (TO-263AB) TO-262AA K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters, and reverse battery protection. 3 1 2 1 MECHANICAL DATA VB20100C VI20100C PIN 1 K PIN 1 PIN 2 2 Case: TO-220AB, ITO-220AB, DPAK (TO-263AB), PIN 2 HEATSINK PIN 3 K and TO-262AA Molding compound meets UL 94 V-0 flammability rating click logo to get started DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per Models J-STD-002 and JESD 22-B102 Available E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 10 A F(AV) Mounting Torque: 10 in-lbs maximum V 100 V RRM I 150 A FSM V at I = 10 A 0.58 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20100C VF20100C VB20100C VI20100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 20 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed I 150 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 150 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 1.0 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 88977 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 mA T = 25 C V 105 (minimum) - V R A BR I = 5 A 0.55 - F T = 25 C A I = 10 A 0.65 0.79 Instantaneous forward voltage F (1) V V F per diode I = 5 A 0.50 - F T = 125 C A I = 10 A 0.58 0.68 F T = 25 C 17 - A A V = 70 V R T = 125 C 5.3 - mA A (2) Reverse current per diode I R T = 25 C - 800 A A V = 100 V R T = 125 C 12 25 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20100CVF20100CVB20100CVI20100CUNIT Typical thermal resistance per diode R 2.8 5.5 2.8 2.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20100C-E3/4W 1.881 4W 50/tube Tube ITO-220AB VF20100C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20100C-E3/8W 1.39 8W 800/tube Tape and reel TO-262AA VI20100C-E3/4W 1.452 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 20 D = 0.8 Resistive or Inductive Load D = 0.5 18 D = 0.3 20 16 VF20100C D = 0.2 V20100C 14 D = 1.0 16 D = 0.1 VI(B)20100C 12 12 10 8 T 8 6 4 4 2 D = t /T t p p 0 0 25 50 75 100 125 150 175 0 04 8 12 16 20 24 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 88977 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)