V60100C-E3/4W Vishay

333 3 V60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.36 V at I = 5 A F F FEATURES TO-220AB TO-262AA K Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB 3 2 3 package) 1 2 1 Low thermal resistance V60100C VI60100C PIN 1 PIN 1 PIN 2 PIN 2 Solder bath temperature 275 C maximum, 10 s, per CASE K PIN 3 PIN 3 JESD 22-B106 (for TO-220AB and TO-262AA package) 2 Material categorization: for definitions of compliance D PAK (TO-263AB) please see www.vishay.com/doc 99912 K TYPICAL APPLICATIONS For use in high frequency converters, switching power 2 supplies, freewheeling diodes, OR-ing diode, DC/DC 1 converters, and reverse battery protection. VB60100C PIN 1 K MECHANICAL DATA PIN 2 HEATSINK 2 Case: TO-220AB, D PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating ADDITIONAL RESOURCES Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per 3D Models J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum I 2 x 30 A F(AV) V 100 V RRM I 320 A FSM V at I = 30 A 0.66 V F F T max. 150 C J 2 Package TO-220AB, TO-262AA, D PAK (TO-263AB) Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60100C VI60100C VB60100C UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 60 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed I 320 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 140 mH per diode E 450 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 1.0 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 23-Sep-2019 Document Number: 88942 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DV60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT 100 Breakdown voltage I = 1.0 mA T = 25 C V -V R A BR (minimum) I = 5 A 0.45 - F I = 10 A 0.52 - F I = 15 A T = 25 C 0.58 0.63 F A I = 20 A 0.63 - F I = 30 A 0.73 0.79 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.36 - F I = 10 A 0.45 - F I = 15 A T = 125 C 0.53 0.58 F A I = 20 A 0.58 - F I = 30 A 0.66 0.70 F T = 25 C 24 500 A A V = 80 V R T = 125 C 13 20 mA A (2) Reverse current at rated V per diode I R R T = 25 C 65 1000 A A V = 100 V R T = 125 C 30 - mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60100C VI60100C VB60100C UNIT Typical thermal resistance per diode R 2.5 2.5 2.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V60100C-E3/4W 1.89 4W 50/tube Tube TO-263AB VB60100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB60100C-E3/8W 1.39 8W 800/tube Tape and reel TO-262AA VI60100C-E3/P 1.46 P 50/tube Tube Revision: 23-Sep-2019 Document Number: 88942 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000