V40120C, VI40120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB TO-262AA Low forward voltage drop, low power losses K High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 3 2 2 1 TYPICAL APPLICATIONS 1 V40120C VI40120C For use in high frequency DC/DC converters, switching PIN 1 PIN 1 PIN 2 PIN 2 power supplies, freewheeling diodes, OR-ing diode, and K PIN 3 CASE PIN 3 reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating I 2 x 20 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 120 V RRM commercial grade I 250 A FSM Terminals: matte tin plated leads, solderable per V at I = 20 A 0.63 V F F J-STD-002 and JESD 22-B102 T max. 150 C M3 suffix meets JESD 201 class 1A whisker testt J Package TO-220AB, TO-262AA Polarity: as marked Diode variation Common cathode Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40120C VI40120C UNIT Max. repetitive peak reverse voltage V 120 V RRM per device 40 Max. average forward rectified current (fig. 1) I A F(AV) per diode 20 Peak forward surge current 8.3 ms single half sine-wave I 250 A FSM superimposed on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 09-Nov-17 Document Number: 89163 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40120C, VI40120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F I = 10 A T = 25 C 0.60 - F A I = 20 A 0.78 0.88 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.43 - F I = 10 A T = 125 C 0.53 - F A I = 20 A 0.63 0.71 F T = 25 C 19 - A A V = 90 V R T = 125 C 10 - mA A (2) Reverse current per diode I R T = 25 C - 500 A A V = 120 V R T = 125 C 22 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40120C VI40120C UNIT Typical thermal resistance per diode R 1.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40120C-M3/4W 1.88 4W 50/tube Tube TO-262AA VI40120C-M3/4W 1.45 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89163 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000