V40100PGW-M34W Vishay

V40100PGW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.42 V at I = 5 A F F FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS TO-3PW For use in high frequency converters, switching power PIN 1 PIN 2 supplies, freewheeling diodes, OR-ing diode, DC/DC CASE PIN 3 converters and reverse battery protection. MECHANICAL DATA Case: TO-3PW PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 20 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 100 V RRM commercial grade I 250 A FSM Terminals: Matte tin plated leads, solderable per E at L = 70 mH 250 mJ J-STD-002 and JESD 22-B102 AS M3 suffix meets JESD 201 class 1A whisker test V at I = 20 A 0.67 V F F Polarity: As marked T max. 150 C J Mounting Torque: 10 in-lbs maximum Package TO-3PW Diode variations Dual common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40100PGW UNIT Maximum repetitive peak reverse voltage V 100 V RRM per device 40 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 20 Peak forward surge current 8.3 ms single half sine-wave I 250 A FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 70 mH per diode E 250 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p 1.0 A I RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 22-Dec-13 Document Number: 89180 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V40100PGW www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 100 (minimum) - V R A BR I = 5 A 0.49 - F I = 10 A T = 25 C 0.58 - F A I = 20 A 0.76 0.85 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.42 - F I = 10 A T = 125 C 0.54 - F A I = 20 A 0.67 0.73 F T = 25 C 16 - A A V = 70 V R T = 125 C 8.3 - mA A (2) Reverse current per diode I R T = 25 C 69 1000 A A V = 100 V R T = 125 C 21 47 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40100PGW UNIT per diode 2.0 Typical thermal resistance R C/W JC per device 1.4 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW V40100PGW-M3/4W 4.5 4W 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 50 18 D = 0.8 D = 0.5 16 D = 0.3 40 14 D = 0.2 12 D = 1.0 D = 0.1 30 10 8 20 T 6 4 10 2 D = t /T t p p 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 22-Dec-13 Document Number: 89180 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)