V40120CI-M3/P Vishay

V40120CI www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.41 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power PIN 1 PIN 2 supplies, freewheeling diodes, OR-ing diode, DC/DC PIN 3 CASE converters, and reverse battery protection. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 20 A F(AV) Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating V 120 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 250 A FSM commercial grade V at I = 20 A (125 C) 0.62 V F F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package TO-220AB M3 suffix meets JESD 201 class 1A whisker test Diode variation Common cathode Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40120CI UNIT Maximum repetitive peak reverse voltage V 120 V RRM per device 40 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed I 250 A FSM on rated load per diode (1) Operating junction temperature range T -40 to +150 J C Storage temperature range T -55 to +150 STG Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT <1/ R D J JA Revision: 24-Oct-17 Document Number: 87546 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40120CI www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.48 - F I = 10 A T = 25 C 0.57 - F A I = 20 A 0.74 0.82 F Instantaneous forward voltage (1) V V F per diode I = 5 A 0.41 - F I = 10 A T = 125 C 0.52 - F A I = 20 A 0.62 0.70 F T = 25 C 0.01 - A V = 90 V R T = 125 C 9.0 - A (2) Reverse current per diode I mA R T = 25 C - 0.7 A V = 120 V R T = 125 C 20.0 38 A Junction capacitance 4 V, 1MHz C 2400 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V40120CIUNIT Typical thermal resistance per device R 1.7 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V40120CI-M3/P 1.88 P 50/tube Tube Revision: 24-Oct-17 Document Number: 87546 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000