V4PAN50-M3 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP Series Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Top View Bottom View Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPA (DO-221BC) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Anode Cathode TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, click logo to get started DESIGN SUPPORT TOOLS freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA Case: SMPA (DO-221BC) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-M3 - halogen-free, RoHS-compliant, and I 4.0 A F(AV) commercial grade V 50 V RRM Terminals: matte tin plated leads, solderable per I 80 A J-STD-002 and JESD22-B102 FSM M3 suffix meets JESD 201 class 2 whisker test V at I = 4.0 A (T = 125 C) 0.46 V F F A Polarity: Color band denotes cathode end T max. 150 C J Package SMPA (DO-221BC) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V4PAN50 UNIT Device marking code 4N5 Maximum repetitive peak reverse voltage V 50 V RRM (1) I 4.0 F Maximum DC forward current A (2) I 3.0 F Maximum DC reverse voltage V 35 V DC Peak forward surge current 10 ms single half sine-wave I 80 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Units mounted on 15 mm x 15 mm pad areas, 2 oz. PCB (2) Free air, mounted on recommended copper pad area Revision: 13-Feb-2019 Document Number: 87910 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V4PAN50-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.0 A 0.43 - F T = 25 C A I = 4.0 A 0.51 0.59 F (1) Instantaneous forward voltage V V F I = 2.0 A 0.34 - F T = 125 C A I = 4.0 A 0.46 0.54 F T = 25 C 8- A A V = 35 V R T = 125 C 8.8 - mA A (2) Reverse current I R T = 25 C - 600 A A V = 50 V R T = 125 C 12 35 mA A Typical junction capacitance 4.0 V, 1 MHz C 480 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V4PAN50 UNIT (1) R 100 JA Typical thermal resistance C/W (1) R 9 JM Note (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V4PAN50-M3/I 0.032 I 14 000 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise specified) A 4.5 2.6 T = 135 C, R = 9 C/W M thJM 2.4 D = 0.8 4 D = 0.5 2.2 D = 0.3 3.5 2 D = 0.2 1.8 3 D = 1.0 1.6 D = 0.1 2.5 1.4 1.2 2 T = 25 C A 1 R = 100 C/W 1.5 thJA T 0.8 0.6 1 0.4 T measured at cathode band 0.5 M D = t /T t 0.2 p p terminal PCB mount 0 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 Case Temperature (C) (D=duty cycle=0.5) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 13-Feb-2019 Document Number: 87910 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)