X-On Electronics has gained recognition as a prominent supplier of V60120C-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. V60120C-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

V60120C-E3/4W Vishay

V60120C-E3/4W electronic component of Vishay
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Part No.V60120C-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 60 Amp 120 Volt Dual TrenchMOS
Datasheet: V60120C-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.97 ea
Line Total: USD 2.97 
Availability - 6251
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6251
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2.97
10 : USD 1.914
100 : USD 1.694
500 : USD 1.408
1000 : USD 1.276
2000 : USD 1.265
5000 : USD 1.243

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Hts Code
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We are delighted to provide the V60120C-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the V60120C-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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V60120C, VB60120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.41 V at I = 5 A F F FEATURES TMBS 2 TO-220AB D PAK (TO-263AB) Trench MOS Schottky technology Low forward voltage drop, low power losses K High efficiency operation Low thermal resistance 2 Meets MSL level 1, per J-STD-020, 1 LF maximum peak of 245 C (for TO-263AB package) 3 2 Solder bath temperature 275 C maximum, 10 s, per 1 JESD 22-B106 (for TO-220AB package) V60120C VB60120C Material categorization: for definitions of compliance PIN 1 PIN 1 PIN 2 K please see www.vishay.com/doc 99912 PIN 3 CASE PIN 2 HEATSINK TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. Models Available MECHANICAL DATA 2 PRIMARY CHARACTERISTICS Case: TO-220AB and D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating I 2 x 30 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 120 V RRM Terminals: matte tin plated leads, solderable per I 300 A FSM J-STD-002 and JESD 22-B102 V at I = 30 A 0.71 V F F E3 suffix meets JESD 201 class 1A whisker test T max. 150 C J Polarity: as marked 2 Package TO-220AB, D PAK (TO-263AB) Mounting Torque: 10 in-lbs maximum Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60120CVB60120CUNIT Maximum repetitive peak reverse voltage V 120 V RRM per device 60 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 300 A FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 100 mH J E 260 mJ AS per diode Peak repetitive reverse current at t = 2 s, 1 kHz, p I 0.5 A RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 19-Jun-2018 Document Number: 88976 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V60120C, VB60120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 120 (minimum) - V R A BR I = 5 A 0.48 - F I = 15 A T = 25 C 0.66 - F A I = 30 A 0.88 0.95 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.41 - F I = 15 A T = 125 C 0.58 - F A I = 30 A 0.71 0.75 F T = 25 C 14 - A A V = 90 V R T = 125 C 11 - mA A (2) Reverse current at rated V per diode I R R T = 25 C 40 500 A A V = 120 V R T = 125 C 15 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV60120CVB60120CUNIT Typical thermal resistance per diode R 2.2 2.2 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V60120C-E3/4W 1.89 4W 50/tube Tube TO-263AB VB60120C-E3/4W 1.38 4W 50/tube Tube TO-263AB VB60120C-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 30 D = 0.8 Resistive or Inductive Load D = 0.5 60 25 D = 0.3 50 20 D = 0.2 D = 1.0 40 D = 0.1 15 30 T 10 20 5 10 D = t /T t p p 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 88976 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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