V60100C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.36 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS V60100C For use in high frequency converters, switching power PIN 1 PIN 2 supplies, freewheeling diodes, OR-ing diode, DC/DC PIN 3 CASE converters and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating I 2 x 30 A F(AV) Base P/N-M3 - halogen-free, RoHS compliant, and V 100 V RRM commercial grade I 320 A FSM Terminals: matte tin plated leads, solderable per V at I = 30 A 0.66 V F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package TO-220AB Polarity: as marked Diode variation Common cathode Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60100C UNIT Max. repetitive peak reverse voltage V 100 V RRM per device 60 Max. average forward rectified current (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 320 A FSM superimposed on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 09-Nov-17 Document Number: 89155 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V60100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 100 (min.) - V R A BR I = 5 A 0.45 - F I = 10 A 0.52 - F I = 15 A T = 25 C 0.58 0.63 F A I = 20 A 0.63 - F I = 30 A 0.73 0.79 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.36 - F I = 10 A 0.45 - F I = 15 A T = 125 C 0.53 0.58 F A I = 20 A 0.58 - F I = 30 A 0.66 0.70 F T = 25 C 24 500 A A V = 80 V R T = 125 C 13 20 mA A (2) Reverse current at rated V per diode I R R T = 25 C 65 1000 A A V = 100 V R T = 125 C 30 - mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV60100CUNIT Typical thermal resistance per diode R 2.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V60100C-M3/4W 1.89 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 30 Resistive or Inductive Load D = 0.8 60 D = 0.5 25 50 D = 0.3 20 D = 1.0 40 D = 0.2 15 D = 0.1 30 T 10 20 5 10 D = t /T t p p 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 09-Nov-17 Document Number: 89155 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)