V6W60C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.41 V at I = 3 A F F FEATURES Trench MOS Schottky technology TMBS TO-252 (D-PAK) Ideal for automated placement Low forward voltage drop, low power losses K High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak A of 260 C Material categorization: For definitions of compliance A please see www.vishay.com/doc 99912 V6W60C TYPICAL APPLICATIONS A K For use in high frequency DC/DC converters, switching HEATSINK A power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS I 2 x 3 A F(AV) Case: TO-252 (D-PAK) V 60 V RRM Molding compound meets UL 94 V-0 flammability rating I 80 A Base P/N-M3 - halogen-free, RoHS-compliant, and FSM V at I = 3 A (T = 125 C) 0.41 V commercial grade F F A T max. 150 C J Terminals: Matte tin plated leads, solderable per Package TO-252 (D-PAK) J-STD-002 and JESD 22-B102 Diode variation Dual common cathode M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V6W60C UNIT Maximum repetitive peak reverse voltage V 60 V RRM per device 6 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 3 Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 04-Dec-13 Document Number: 89967 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V6W60C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT T = 25 C 0.49 0.57 A (1) Instantaneous forward voltage per diode I = 3 A V V F F T = 125 C 0.41 0.50 A T = 25 C -2200 A A (2) Reverse current per diode V = 60 V I R R T = 25 C 8 26 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V6W60CUNIT per diode 3.6 R JC Typical thermal resistance per device 1.8 C/W (1) (2) per device R 65 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V6W60C-M3/I 0.83 I 2500/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 7 1.8 D = 0.8 D = 0.5 o Rth =Rth =1.8 C/W JA JC 1.6 6 D = 0.3 1.4 D = 0.2 5 D = 0.1 1.2 D = 1.0 4 1.0 o 0.8 T ,Rth =65 C/W A JA 3 T 0.6 2 0.4 1 D = t /T t p 0.2 p 0.0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 0 25 50 75 100 125 150 Average Forward Current (A) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 04-Dec-13 Document Number: 89967 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)