V8KM60DU www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.41 V at I = 2 A F F FEATURES 11 22 Available Trench MOS Schottky technology 33 Low forward voltage drop, low power losses 4 88 High efficiency operation 77 Meets MSL level 1, per J-STD-020, 66 LF maximum peak of 260 C 55 AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 FlatPAK 5 x 6 Material categorization: for definitions of compliance 1 and / or 2 7, 8 please see www.vishay.com/doc 99912 3 and / or 4 5, 6 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, click logo to get started DESIGN SUPPORT TOOLS freewheeling diodes, and polarity protection applications. Models MECHANICAL DATA Available Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant PRIMARY CHARACTERISTICS Base P/NHM3 - halogen-free, RoHS-compliant, and I 2 x 4 A F(AV) AEC-Q101 qualified V 60 V RRM Terminals: matte tin plated leads, solderable per I 80 A FSM J-STD-002 and JESD 22-B102 V at I = 4 A (T = 125 C) 0.50 V F F A M3 and HM3 suffix meets JESD 201 class 2 whisker test T max. 175 C J Package FlatPAK 5 x 6 Circuit configuration Separated cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8KM60DU UNIT Device marking code V8M60D Maximum repetitive peak reverse voltage V 60 V RRM (1) I 4A F(AV) Maximum DC forward current per diode (2) I 3A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load per diode (3) Operating junction temperature range T -40 to +175 C J Storage temperature range T -55 to +175 C STG Notes (1) With infinite heatsink (2) Free air, mounted on recommended pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 18-Jul-2018 Document Number: 87536 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V8KM60DU www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2 A 0.51 - F T = 25 C A I = 4 A 0.56 0.64 F (1) Instantaneous forward voltage per diode V V F I = 2 A 0.41 - F T = 125 C A I = 4 A 0.50 0.58 F T = 25 C -0.3 A (2) Reverse current per diode V = 60 V I mA R R T = 125 C 1.5 6 A Typical junction capacitance per diode 4.0 V, 1 MHz C 500 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TYP.MAX.UNIT (1)(2) R 100 - JA Thermal resistance per diode C/W (3) R 3.5 4.5 JM Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area thermal resistance R - junction-to-ambient JA (3) Mounted on infinite heat sink thermal resistance R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8KM60DU-M3/H 0.10 H 1500 7 diameter plastic tape and reel V8KM60DU-M3/I 0.10 I 6000 13 diameter plastic tape and reel (1) V8KM60DUHM3/H 0.10 H 1500 7 diameter plastic tape and reel (1) V8KM60DUHM3/I 0.10 I 6000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 18-Jul-2018 Document Number: 87536 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000