333 3 V10P15 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.60 V at I = 5 A F F FEATURES eSMP Series Very low profile - typical height of 1.1 mm Available Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available - Automotive ordering code base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in low voltage high frequency inverters, 3D Models freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 10 A F(AV) Case: SMPC (TO-277A) V 150 V RRM Molding compound meets UL 94 V-0 flammability rating I 180 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade V at I = 10 A (125 C) 0.66 V F F Base P/NHM3 - halogen-free, RoHS-compliant and T max. 150 C J AEC-Q101 qualified Package SMPC (TO-277A) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10P15 UNIT Device marking code V1015 Maximum repetitive peak reverse voltage V 150 V RRM (1) I 10 F(AV) Maximum DC forward current A (2) I 3 F(AV) Peak forward surge current 10 ms single half sine-wave I 180 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended pad area Revision: 18-Dec-2019 Document Number: 87621 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V10P15 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.75 - F T = 25 C A I = 10 A 1.00 1.08 F (1) Instantaneous forward voltage V V F I = 5 A 0.60 - F T = 125 C A = 10 A 0.66 0.72 I F T = 25 C 0.01 - A V = 100 V R T = 125 C 2.0 - A (2) Reverse current I mA R T = 25 C - 0.20 A V = 150 V R T = 125 C 4 14 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL V10P15 UNIT (1) R 75 JA Typical thermal resistance C/W (2) R 4 JM Notes (1) Free air, mounted on recommended copper pad area thermal resistance R - junction to ambient JA (2) Mounted on 30 mm x 30 mm pad areas aluminum PCB, thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V10P15-M3/H 0.10 H 1500 7 diameter plastic tape and reel V10P15-M3/I 0.10 I 6500 13 diameter plastic tape and reel (1) V10P15HM3/H 0.10 H 1500 7 diameter plastic tape and reel (1) V10P15HM3/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 18-Dec-2019 Document Number: 87621 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000