333 3 V10P45 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.34 V at I = 5 A F F FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available - Automotive ordering code base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. 3D Models MECHANICAL DATA Case: SMPC (TO-277A) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and I 10 A F(AV) commercial grade V 45 V RRM Base P/NHM3 X - halogen-free, RoHS-compliant, and I 180 A FSM AEC-Q101 qualified ( X denotes revision code e.g. A, B,.....) V at I = 10 A 0.41 V F F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package SMPC (TO-277A) M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10P45 UNIT Device marking code V1045 Maximum repetitive peak reverse voltage V 45 V RRM (1) I 10 F Maximum DC forward current A (2) I 4.4 F Peak forward surge current 10 ms single half sine-wave I 180 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 30-Oct-2019 Document Number: 89340 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V10P45 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.42 - F T = 25 C A I = 10 A 0.48 0.57 F (1) Instantaneous forward voltage V V F I = 5.0 A 0.34 - F T = 125 C A I = 10 A 0.41 0.50 F T = 25 C 21 800 A A (2) Reverse current V = 45 V I R R T = 125 C 9 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10P45 UNIT (1) R 75 JA Typical thermal resistance C/W (2) R 4 JM Notes (1) Free air, mounted on recommended copper pad area thermal resistance R - junction-to-ambient JA (2) Mounted on 30 mm x 30 mm aluminum PCB thermal resistance R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V10P45-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V10P45-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) V10P45HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) V10P45HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 30-Oct-2019 Document Number: 89340 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000