V6WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.34 V at I = 3 A F F FEATURES Trench MOS Schottky technology TMBS Ideal for automated placement TO-252 (D-PAK) Low forward voltage drop, low power losses High efficiency operation K Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C A Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 A TYPICAL APPLICATIONS V6WL45C For use in high frequency DC/DC converters, switching A K power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. HEATSINK A MECHANICAL DATA Case: TO-252 (D-PAK) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 3 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 45 V RRM commercial grade I 80 A FSM Terminals: Matte tin plated leads, solderable per V at I = 3 A (T = 125 C) 0.34 V F F A J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package TO-252 (D-PAK) Polarity: As marked Diode variation Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V6WL45C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 6 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 3 Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T - 40 to + 150 C J STG Revision: 02-Aug-13 Document Number: 89968 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V6WL45C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT T = 25 C 0.43 0.52 A (1) Instantaneous forward voltage per diode I = 3 A V V F F T = 125 C 0.34 0.43 A T = 25 C - 1000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 8 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V6WL45CUNIT per diode 3.6 R JC Typical thermal resistance per device 1.8 C/W (1) (2) per device R 65 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V6WL45C-M3/I 0.38 I 2500/reel 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 7 1.4 D = 0.8 D = 0.5 o Rth =Rth =1.8 C/W JA JC 6 1.2 D = 0.3 D = 0.2 5 1.0 D = 0.1 D = 1.0 4 0.8 o T ,Rth =65 C/W A JA 3 0.6 T 2 0.4 1 0.2 D = t /T t p p 0 0.0 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 02-Aug-13 Document Number: 89968 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)