V40100C, VI40100C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.38 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB TO-262AA Low forward voltage drop, low power losses K High efficiency operation Low thermal resistance Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance 3 3 please see www.vishay.com/doc 99912 2 2 1 1 V40100C VI40100C TYPICAL APPLICATIONS PIN 1 PIN 1 PIN 2 PIN 2 For use in high frequency DC/DC converters, switching K PIN 3 CASE PIN 3 power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS I 2 x 20 A Case: TO-220AB and TO-262AA F(AV) Molding compound meets UL 94 V-0 flammability rating V 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 250 A FSM commercial grade V at I = 20 A 0.61 V F F Terminals: matte tin plated leads, solderable per T max. 150 C J-STD-002 and JESD 22-B102 J M3 suffix meets JESD 201 class 1A whisker test Package TO-220AB, TO-262AA Polarity: as marked Diode variation Common cathode Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV40100CVI40100CUNIT Max. repetitive peak reverse voltage V 100 V RRM per device 40 Max. average forward rectified current (fig. 1) I A F(AV) per diode 20 Peak forward surge current 8.3 ms single half sine-wave I 250 A FSM superimposed on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 09-Nov-17 Document Number: 89162 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V40100C, VI40100C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.47 - F I = 10 A T = 25 C 0.54 - F A I = 20 A 0.67 0.73 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.38 - F I = 10 A T = 125 C 0.45 - F A I = 20 A 0.61 0.67 F T = 25 C 9- A A V = 70 V R T = 125 C 10 - mA A (2) Reverse current at rated V per diode I R R T = 25 C - 1000 A A V = 100 V R T = 125 C 21 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLV40100CVI40100CUNIT Typical thermal resistance per diode R 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V40100C-M3/4W 1.85 4W 50/tube Tube TO-262AA VI40100C-M3/4W 1.45 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89162 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000