MBD701, MMBD701L, SMMBD701L Silicon Hot-Carrier Diodes Schottky Barrier Diodes www.onsemi.com These devices are designed primarily for highefficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. TO92 2Lead SOT23 (TO236) Features CASE 182 CASE 318 Extremely Low Minority Carrier Lifetime 15 ps (Typ) STYLE 1 STYLE 8 Very Low Capacitance 1.0 pF V = 20 V R TO92 SOT23 High Reverse Voltage to 70 V 2 1 3 1 Low Reverse Leakage 200 nA (Max) CATHODE ANODE CATHODE ANODE S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC Qualified and PPAP MARKING DIAGRAMS Capable These Devices are PbFree and are RoHS Compliant MBD 701 MAXIMUM RATINGS 5H M AYW Rating Symbol Value Unit 1 Reverse Voltage V 70 V R Forward Power Dissipation P F TO92 SOT23 T = 25C mW A MBD701 280 A = Assembly Location MMBD701L, SMMBD701L 200 Y = Year W = Work Week Derate above 25C mW/C 5H = Device Code (SOT23) MBD701 2.8 M = Date Code* MMBD701L, SMMBD701L 2.0 = PbFree Package Operating Junction Temperature T 55 to +125 C J (Note: Microdot may be in either location) Range *Date Code orientation and/or overbar may vary Storage Temperature Range T 55 to +150 C stg depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 7 MBD701/DMBD701, MMBD701L, SMMBD701L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 Adc) 70 R Total Capacitance C pF T (V = 20 V, f = 1.0 MHz) Figure 1 0.5 1.0 R Reverse Leakage I nAdc R (V = 35 V) Figure 3 9.0 200 R Forward Voltage V Vdc F (I = 1.0 mAdc) Figure 4 0.42 0.5 F Forward Voltage V Vdc F (I = 10 mAdc) Figure 4 0.7 1.0 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Package Shipping MBD701G TO92 1,000 Units / Bulk (PbFree) MMBD701LT1G SOT23 3,000 / Tape & Reel (PbFree) SMMBD701LT1G SOT23 3,000 / Tape & Reel (PbFree) MMBD701LT3G SOT23 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2