MMBF170L, NVBF170L
MOSFET N-Channel,
SOT-23
500 mA, 60 V
Features
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NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
500 mA, 60 V
These Devices are PbFree and are RoHS Compliant
R = 5
DS(on)
MAXIMUM RATINGS
SOT23
Rating Symbol Value Unit
CASE 318
DrainSource Voltage V 60 Vdc
DSS
STYLE 21
DrainGate Voltage V 60 Vdc
DGS
GateSource Voltage
Continuous V 20 Vdc
NChannel
GS
Nonrepetitive (t 50 s) V 40 Vpk
p GSM
3
Drain Current Continuous I 0.5 Adc
D
Pulsed I 0.8
DM
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
1
Total Device Dissipation FR5 Board P
D
(Note 1.) T = 25C 225 mW
A
Derate above 25C 1.8 mW/C
2
Thermal Resistance, JunctiontoAmbient R 556 C/W
JA
Junction and Storage Temperature T , T 55 to C
J stg
+150
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
& PIN ASSIGNMENT
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1. FR5 = 1.0 0.75 0.062 in. Drain
6Z M
Gate 1 2 Source
6Z = Specific Device Code
M = Date Code
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 1994
1 Publication Order Number:
May, 2019 Rev. 10 MMBF170LT1/DMMBF170L, NVBF170L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (V = 0, I = 100 A) V 60 Vdc
GS D (BR)DSS
GateBody Leakage Current, Forward (V = 15 Vdc, V = 0) I 10 nAdc
GSF DS GSS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V = V , I = 1.0 mA) V 0.8 3.0 Vdc
DS GS D GS(th)
Static DrainSource OnResistance (V = 10 Vdc, I = 200 mA) r 5.0
GS D DS(on)
OnState Drain Current (V = 25 Vdc, V = 0) I 0.5 A
DS GS D(off)
DYNAMIC CHARACTERISTICS
Input Capacitance C 60 pF
iss
(V = 10 Vdc, V = 0 V, f = 1.0 MHz)
DS GS
SWITCHING CHARACTERISTICS (Note 1)
TurnOn Delay Time t 10 ns
d(on)
(V = 25 Vdc, I = 500 mA, R = 50 )
DD D gen
Figure 1
TurnOff Delay Time t 10
d(off)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
MMBF170LT1G SOT23 (TO236) 3000 / Tape & Reel
(PbFree)
MMBF170LT3G SOT23 (TO236) 10000 / Tape & Reel
(PbFree)
NVBF170LT1G* SOT23 (TO236) 3000 / Tape & Reel
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
t
on t
off
t t t
d(on) r d(off) t
f
90%
90%
125
TO SAMPLING OUTPUT
V
in SCOPE INVERTED
PULSE
50 INPUT 10%
GENERATOR 20 dB 50 V
out
V
out
ATTENUATOR
40 pF
50
INPUT
90%
50% 50%
10%
V
50 1 M in
PULSE WIDTH
(V AMPLITUDE 10 VOLTS)
in
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
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2