MMBD452LT1G Dual Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for highefficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an www.onsemi.com inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. 30 VOLTS Features DUAL HOTCARRIER Extremely Low Minority Carrier Lifetime DETECTOR AND SWITCHING Very Low Capacitance DIODES Low Reverse Leakage These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant ANODE CATHODE 3 MAXIMUM RATINGS (T = 125C unless otherwise noted) J CATHODE/ANODE Rating Symbol Value Unit Reverse Voltage V 30 V R 3 Forward Power Dissipation P SOT23 (TO236) F T = 25C 225 mW A CASE 318 1 Derate above 25C 1.8 mW/C STYLE 11 2 Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5N M ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A 1 (EACH DIODE) 5N = Device Code Characteristic Symbol Min Typ Max Unit M = Date Code* Reverse Breakdown Voltage V 30 V (BR)R = PbFree Package (I = 10 A) R (Note: Microdot may be in either location) Total Capacitance C 0.9 1.5 pF *Date Code orientation and/or overbar may vary T (V = 15 V, f = 1.0 MHz) Figure 1 depending upon manufacturing location. R Reverse Leakage I 13 200 nAdc R (V = 25 V) Figure 3 ORDERING INFORMATION R Forward Voltage V 0.38 0.45 Vdc Device Package Shipping F (I = 1.0 mAdc) Figure 4 F MMBD452LT1G SOT23 3,000 / Tape & Reel Forward Voltage V 0.52 0.6 Vdc (PbFree) F (I = 10 mAdc) Figure 4 F For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC,1996 1 Publication Order Number: October, 2016 Rev. 5 MMBD452LT1/DMMBD452LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 f = 1.0 MHz 2.4 400 2.0 KRAKAUER METHOD 300 1.6 1.2 200 0.8 100 0.4 0 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 010 20 30 40 50 60 70 80 90 100 V , REVERSE VOLTAGE (VOLTS) I , FORWARD CURRENT (mA) R F Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 100 T = 100C A 1.0 10 T = - 40C T = 85C A A 75C 0.1 1.0 25C T = 25C A 0.01 0.001 0.1 0 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2 V , REVERSE VOLTAGE (VOLTS) V , FORWARD VOLTAGE (VOLTS) R F Figure 3. Reverse Leakage Figure 4. Forward Voltage I F(PEAK) CAPACITIVE CONDUCTION I R(PEAK) FORWARD STORAGE CONDUCTION CONDUCTION BALLAST SAMPLING SINUSOIDAL PADS NETWORK OSCILLOSCOPE GENERATOR (PADS) (50 INPUT) DUT Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 2 I , REVERSE LEAKAGE ( A) C , TOTAL CAPACITANCE (pF) R T , MINORITY CARRIER LIFETIME (ps) I , FORWARD CURRENT (mA) F