STPSC8H065CT STMicroelectronics

STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultrahigh performance power A1 Schottky diode. It is manufactured using a silicon K carbide substrate. The wide band gap material A2 allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. A2 Especially suited for use in interleaved or bridge- K A1 less topologies, this dual-diode rectifier will boost TO-220AB the performance in hard switching conditions. Its STPSC8H065CT high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value Features I 2 x 4 A F(AV) No or negligible reverse recovery V 650 V RRM Switching behavior independent of T (max) 175 C temperature j High forward surge capability November 2013 DocID024808 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPSC8H065C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) T = 145 C , DC Per diode 4 A c I Average forward current F(AV) (2) T = 145 C , DC Per device 8 A c t = 10 ms sinusoidal, T = 25 C 38 p c I Surge non repetitive forward current t = 10 ms sinusoidal, T = 125 C 35 A FSM p c t = 10 s square, T = 25 C 200 p c (1) I Repetitive peak forward current T = 145 C ,T = 175 C, = 0.1 17 A FRM c j T Storage temperature range -65 to +175 C stg (3) T Operating junction temperature -40 to +175 C j 1. Value based on R max (per diode) th(j-c) 2. Value based on R max (per device) th(j-c) dPtot 1 --------------- -------------------------- 3. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistance parameters Symbol Parameter Typ. Max. Unit Per diode 1.8 2.7 R Junction to case th(j-c) Per device 0.95 1.40 C/W R Coupling - 0.1 th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -3 40 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 35 170 j T = 25 C - 1.56 1.75 j (2) V Forward voltage drop I = 4 A V F F T = 150 C - 1.98 2.5 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.35 x I + 0.288 x I F(AV) F (RMS) 2/8 DocID024808 Rev 2