STPTIC-15L2C4 STMicroelectronics

STPTIC-15C4 Datasheet Parascan tunable integrated capacitor Features High power capability 5:1 tuning range High linearity (48x) High quality factor (Q) Low leakage current Compatible with high voltage control IC (STHVDAC series) WLCSP 3 solder bars RF tunable passive implementation in mobile phones to optimize antenna radiated performance Available in wafer level chip scale package: WLCSP package 0.75 x 0.72 x 0.32 mm PTIC ECOPACK 2 compliant component RF2 RF1 Applications Bias Cellular antenna open loop tunable matching network in multi-band GSM/ WCDMA/LTE mobile phone Open loop tunable RF filters Description The ST integrated tunable capacitor offers excellent RF performance, low power consumption and high linearity required in adaptive RF tuning applications. The Product status link fundamental building block of PTIC is a tunable material called Parascan, which is STPTIC-15C4 a version of barium strontium titanate (BST) developed by Paratek microwave. BST capacitors are tunable capacitors intended for use in mobile phone application and dedicated to RF tunable applications. These tunable capacitors are controlled through an extended bias voltage ranging from 1 to 24 V. The implementation of BST tunable capacitor in mobile phones enables significant improvement in terms of radiated performance making the performance almost insensitive to the external environment. Parascan is a trademark of Paratek Microwave Inc. DS12593 - Rev 1 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office. STPTIC-15C4 STPTIC-15C4 characteristics 1 STPTIC-15C4 characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Rating Unit P Input power RF (CW model) / all RF ports +40 dBm IN IN V Human body model, JESD22-A114-B, all I/O Class 1B V ESD(HBM) V Machine model, JESD22-A115-A, all I/O +100 V ESD(MM) T Device temperature +125 device C T Storage temperature -55 to +150 stg V Bias voltage 25 V x 1. Class 1B defined as passing 500 V, but fails after exposure to 1000V ESD pulse. Table 2. Recommended operating conditions Rating Symbol Parameter Unit Min. Typ. Max. P RF input power +33 +39 dBm IN F Operating frequency 700 2700 MHz OP T Device temperature +100 device C T Operating temperature -30 +85 OP V Bias voltage 1 24 V BIAS Table 3. Representative performance (T = 25 C otherwise specified) amb Value Symbol Parameter Conditions Unit Min. Typ. Max. C Capacitor at 1 V bias 1.58 1.8 2.02 pF 1V C Capacitor at 2 V bias 1.35 1.5 1.65 pF 2V C Capacitor at 20 V bias 0.39 0.42 0.46 pF 20V C Capacitor at 24 V bias 0.35 0.38 0.42 pF 24V V range = 2 V/ 20 V C Capacitance accuracy 10 % BIAS (1) C Tuning range Ratio between C /C 5/1 1V 24V I Measured with V = 24 V Leakage current 100 nA L BIAS Q Quality factor Measured at 700 MHz at 2 V 50 55 LB Q Quality factor Measured at 2700 MHz at 2 V 35 40 HB (2) (3) V = 2 V 60 dBm BIAS IP3 Third order intercept point (2)(3) V = 20 V 80 dBm BIAS (4)(3) V = 2 V -70 -55 dBm BIAS H2 Second harmonic (4) (3) V = 20 V -80 -70 dBm BIAS DS12593 - Rev 1 page 2/12