STPTIC-82G2C4 STMicroelectronics

STPTIC-82C4 Datasheet Parascan tunable integrated capacitor Features High power capability 5:1 tuning range High linearity High quality factor (Q) Low leakage current Compatible with high voltage control IC (STHVDAC series) WLCSP 3 solder bars RF tunable passive implementation in mobile phones to optimize antenna radiated performance Available in wafer level chip scale package: WLCSP package 0.75 x 0.72 x 0.32 mm PTIC WLCSP package is not sensitive to moisture (MSL = 1) RF2 RF1 ECOPACK2 compliant component Applications Bias Cellular antenna open loop tunable matching network in multi-band GSM/ WCDMA/LTE mobile phone Open loop tunable RF filters Description The ST integrated tunable capacitor offers excellent RF performance, low power Product status link consumption and high linearity required in adaptive RF tuning applications. The STPTIC-82C4 fundamental building block of PTIC is a tunable material called Parascan, which is a version of barium strontium titanate (BST) developed by Paratek microwave. BST capacitors are tunable capacitors intended for use in mobile phone application and dedicated to RF tunable applications. These tunable capacitors are controlled through an extended bias voltage ranging from 1 to 24 V. The implementation of BST tunable capacitor in mobile phones enables significant improvement in terms of radiated performance making the performance almost insensitive to the external environment. Parascan is a trademark of Paratek Microwave Inc. DS11849 - Rev 6 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPTIC-82C4 Electrical characteristics 1 Electrical characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Rating Unit P Input power RF (CW model) / all RF ports +40 dBm IN IN (1) V Human body model, JESD22-A114-B, all I/O Class 1B V ESD(HBM) V Machine model, JESD22-A115-A, all I/O +100 V ESD(MM) V Charge device model, JESD22-C101, all I/O > 125 V ESD(CDM) T Device temperature +125 device C T Storage temperature -55 to +150 stg V Bias voltage 25 V x 1. Class 1B defined as passing 500 V, but fails after exposure to 1000V ESD pulse. Table 2. Recommended operating conditions Rating Symbol Parameter Unit Min. Typ. Max. P RF input power +33 +39 dBm IN F Operating frequency 700 2700 MHz OP T Device temperature +100 device C T Operating temperature -30 +85 OP V Bias voltage 1 24 V BIAS Table 3. Representative performance (T = 25 C otherwise specified) amb Value Symbol Parameter Conditions Unit Min. Typ. Max. C Capacitor at 1 V bias STPTIC-82G2 8.54 9.7 10.86 pF 1V C Capacitor at 2 V bias STPTIC-82G2 7.38 8.2 9.2 pF 2V C Capacitor at 24 V bias STPTIC-82G2 1.53 1.66 1.79 pF 24V V range = 2 V/ 20 V C Capacitance accuracy BIAS 10 % (1) C Tuning range Ratio between C /C 5/1 1V 24V I Measured with V = 24 V Leakage current 100 nA L BIAS Q Quality factor Measured at 700 MHz at 2 V 55 65 LB Q Quality factor Measured at 2700 MHz at 10 V 25 HB Q Quality factor Measured at 2700 MHz at 2 V 20 HB (2)(3) V = 2 V 52 60 dBm BIAS IP3 Third order intercept point (2)(3) V = 20 V 70 75 dBm BIAS (4)(3) V = 2 V -65 -45 dBm H2 Second harmonic BIAS DS11849 - Rev 6 page 2/15