X-On Electronics has gained recognition as a prominent supplier of STQ1HNK60R-AP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STQ1HNK60R-AP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STQ1HNK60R-AP STMicroelectronics

STQ1HNK60R-AP electronic component of STMicroelectronics
STQ1HNK60R-AP STMicroelectronics
STQ1HNK60R-AP MOSFETs
STQ1HNK60R-AP  Semiconductors

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Part No. STQ1HNK60R-AP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
Datasheet: STQ1HNK60R-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7914 ea
Line Total: USD 0.79 
Availability - 70
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
70
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7914
10 : USD 0.6326
30 : USD 0.5531
100 : USD 0.3808
500 : USD 0.344
1000 : USD 0.3256

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the STQ1HNK60R-AP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STQ1HNK60R-AP and other electronic components in the MOSFETs category and beyond.

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STN1HNK60, STQ1HNK60R-AP Datasheet N-channel 600 V, 7.3 typ., 0.4 A SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages 4 Features 3 2 1 Order code V R max. I Package DS DS(on) D SOT-223 STN1HNK60 SOT-223 600 V 8.5 0.4 A STQ1HNK60R-AP TO-92 Extremely high dv/dt capability 100% avalanche tested 3 2 Gate charge minimized 1 TO-92 (Ammopack) D(2, 4) Applications Switching applications Description G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant S(3) reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Int schem nTnZ SOT 223 capability for the most demanding applications. Product status STN1HNK60 STQ1HNK60R-AP DS12594 - Rev 1 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STN1HNK60, STQ1HNK60R-AP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit SOT-223 TO-92 V Drain-source voltage 600 V DS V Drain-gate voltage (R = 20 k) 600 V DGR GS V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 0.4 A D C I Drain current (continuous) at T = 100 C 0.25 A D C (1) I Drain current (pulsed) 1.6 A DM P Total dissipation at T = 25 C 3.3 3 W TOT C (2) dv/dt Peak diode recovery voltage slope 3 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 0.4 A, di/dt 100 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit SOT-223 TO-92 R Thermal resistance junction-ambient 120 C/W thj-amb R Thermal resistance junction-lead 40 C/W thj-lead (1) R Thermal resistance junction-pcb 37.87 C/W thj-pcb 2 1. When mounted on FR-4 board of 1 in , 2 oz Cu, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 0.4 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 25 mJ AS j D AR DD DS12594 - Rev 1 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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