STP9NK50ZFP STMicroelectronics

STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 2 2 N-CHANNEL 500V - 0.72 - 7.2A TO-220/FP/D PAK/I PAK Zener-Protected SuperMESH MOSFET TYPE V R I Pw DSS DS(on) D STP9NK50Z 500 V <0.85 7.2 A 110 W STP9NK50ZFP 500 V <0.85 7.2 A 30 W STB9NK50Z 500 V <0.85 7.2 A 110 W STB9NK50Z-1 500 V <0.85 7.2 A 110 W 3 2 1 TYPICAL R (on) = 0.72 DS EXTREMELY HIGH dv/dt CAPABILITY TO-220FP TO-220 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING 3 REPEATIBILITY 3 1 2 1 2 2 D PAK I PAK DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK50Z P9NK50Z TO-220 TUBE STP9NK50ZFP P9NK50ZFP TO-220FP TUBE 2 STB9NK50ZT4 B9NK50Z TAPE & REEL D PAK 2 STB9NK50Z-1 B9NK50Z TUBE I PAK June 2004 1/13STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP9NK50Z STB9NK50Z STP9NK50ZFP STB9NK50Z-1 V Drain-source Voltage (V =0) 500 V DS GS V Drain-gate Voltage (R =20k ) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T =25C 7.2 7.2 (*) A D C I Drain Current (continuous) at T = 100C 4.5 4.5 (*) A D C I ( ) Drain Current (pulsed) 28.8 28.8 (*) A DM P Total Dissipation at T =25C 110 30 W TOT C Derating Factor 0.88 0.24 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 3500 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 V ISO T Operating Junction Temperature -55to150 C j T Storage Temperature -55to150 C stg ( ) Pulse width limited by safe operating area (1) I 7.2A, di/dt 200A/s, V V ,T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA 2 TO-220 / D PAK / TO-220FP 2 I PAK Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T 300 C Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 7.2 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 190 mJ AS (starting T =25 C, I =I ,V =50V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13