X-On Electronics has gained recognition as a prominent supplier of STP9NK50ZFP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP9NK50ZFP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP9NK50ZFP STMicroelectronics

STP9NK50ZFP electronic component of STMicroelectronics
STP9NK50ZFP STMicroelectronics
STP9NK50ZFP MOSFETs
STP9NK50ZFP  Semiconductors

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See Product Specifications
Part No. STP9NK50ZFP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch, 500V-0.72ohms 7.2A
Datasheet: STP9NK50ZFP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1989 ea
Line Total: USD 3.2 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.0201

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 1.2506
10 : USD 0.9753
100 : USD 0.5869
500 : USD 0.5811
1000 : USD 0.5753
2000 : USD 0.5638
5000 : USD 0.5638
10000 : USD 0.5638

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 25
Multiples : 50
25 : USD 1.4258
200 : USD 1.2836
750 : USD 1.2019
1250 : USD 1.189
2500 : USD 1.1502

0
Ship by Thu. 08 May to Tue. 13 May
MOQ : 1
Multiples : 0
1 : USD 3.5174
10 : USD 3.4307
30 : USD 3.3731
100 : USD 3.3125
500 : USD 3.209

0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 5.5151
10 : USD 1.9954
25 : USD 1.8751

0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 3.1989
10 : USD 1.6935
21 : USD 0.8974
58 : USD 0.854

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 13
Multiples : 1
13 : USD 0.99

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 20
Multiples : 1
20 : USD 0.6222
100 : USD 0.5871
500 : USD 0.5763
1000 : USD 0.5649

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Transistor Type
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Brand
Forward Transconductance - Min
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We are delighted to provide the STP9NK50ZFP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP9NK50ZFP and other electronic components in the MOSFETs category and beyond.

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STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 2 2 N-CHANNEL 500V - 0.72 - 7.2A TO-220/FP/D PAK/I PAK Zener-Protected SuperMESH MOSFET TYPE V R I Pw DSS DS(on) D STP9NK50Z 500 V <0.85 7.2 A 110 W STP9NK50ZFP 500 V <0.85 7.2 A 30 W STB9NK50Z 500 V <0.85 7.2 A 110 W STB9NK50Z-1 500 V <0.85 7.2 A 110 W 3 2 1 TYPICAL R (on) = 0.72 DS EXTREMELY HIGH dv/dt CAPABILITY TO-220FP TO-220 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING 3 REPEATIBILITY 3 1 2 1 2 2 D PAK I PAK DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK50Z P9NK50Z TO-220 TUBE STP9NK50ZFP P9NK50ZFP TO-220FP TUBE 2 STB9NK50ZT4 B9NK50Z TAPE & REEL D PAK 2 STB9NK50Z-1 B9NK50Z TUBE I PAK June 2004 1/13STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP9NK50Z STB9NK50Z STP9NK50ZFP STB9NK50Z-1 V Drain-source Voltage (V =0) 500 V DS GS V Drain-gate Voltage (R =20k ) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T =25C 7.2 7.2 (*) A D C I Drain Current (continuous) at T = 100C 4.5 4.5 (*) A D C I ( ) Drain Current (pulsed) 28.8 28.8 (*) A DM P Total Dissipation at T =25C 110 30 W TOT C Derating Factor 0.88 0.24 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 3500 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 V ISO T Operating Junction Temperature -55to150 C j T Storage Temperature -55to150 C stg ( ) Pulse width limited by safe operating area (1) I 7.2A, di/dt 200A/s, V V ,T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA 2 TO-220 / D PAK / TO-220FP 2 I PAK Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T 300 C Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 7.2 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 190 mJ AS (starting T =25 C, I =I ,V =50V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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