X-On Electronics has gained recognition as a prominent supplier of STP9NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP9NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP9NM60N STMicroelectronics

STP9NM60N electronic component of STMicroelectronics
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Part No.STP9NM60N
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR
Datasheet: STP9NM60N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5175 ea
Line Total: USD 2.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 2.5175
10 : USD 2.113
100 : USD 1.7609
500 : USD 1.5199
1000 : USD 1.3939
5000 : USD 1.3702

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 50
Multiples : 50
50 : USD 1.3905
200 : USD 1.339
750 : USD 1.2875
1250 : USD 1.2875
2500 : USD 1.2875

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.4654

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 4.1749
10 : USD 1.5397
100 : USD 1.2976
250 : USD 1.2638
500 : USD 1.1735
1000 : USD 1.0561
2000 : USD 1.0561
5000 : USD 1.0392
10000 : USD 0.9986

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 6
Multiples : 1
6 : USD 1.4016

   
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We are delighted to provide the STP9NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP9NM60N and other electronic components in the MOSFETs category and beyond.

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STD9NM60N, STF9NM60N, STP9NM60N Datasheet N-channel 600 V, 0.63 typ., 6.5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 2 1 DPAK V R max. I Order code Package DS DS(on) D TAB STD9NM60N DPAK STF9NM60N 600 V 0.745 6.5 A TO-220FP 3 3 2 2 1 1 STP9NM60N TO-220 TO-220 TO-220FP 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance Applications G(1) Switching applications S(3) Description AM01475v1 noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STD9NM60N STF9NM60N STP9NM60N DS6986 - Rev 2 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9NM60N, STF9NM60N, STP9NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 6.5 6.5 A D C (1) I Drain current (continuous) at T = 100 C 4 4 A D C (2) (1) I Drain current (pulsed) 26 26 A DM P Total dissipation at T = 25 C 70 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 6.5 A, di/dt 400 A/s,, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.79 5 thj-case R Thermal resistance junction-ambient 62.5 thj-amb C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 115 mJ AS j D AR DD DS6986 - Rev 2 page 2/24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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