STD9NM60N, STF9NM60N, STP9NM60N Datasheet N-channel 600 V, 0.63 typ., 6.5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 2 1 DPAK V R max. I Order code Package DS DS(on) D TAB STD9NM60N DPAK STF9NM60N 600 V 0.745 6.5 A TO-220FP 3 3 2 2 1 1 STP9NM60N TO-220 TO-220 TO-220FP 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance Applications G(1) Switching applications S(3) Description AM01475v1 noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STD9NM60N STF9NM60N STP9NM60N DS6986 - Rev 2 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9NM60N, STF9NM60N, STP9NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Drain-source voltage 600 V DS V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 6.5 6.5 A D C (1) I Drain current (continuous) at T = 100 C 4 4 A D C (2) (1) I Drain current (pulsed) 26 26 A DM P Total dissipation at T = 25 C 70 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 6.5 A, di/dt 400 A/s,, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.79 5 thj-case R Thermal resistance junction-ambient 62.5 thj-amb C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 115 mJ AS j D AR DD DS6986 - Rev 2 page 2/24