X-On Electronics has gained recognition as a prominent supplier of STP85NF55 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP85NF55 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP85NF55 STMicroelectronics

STP85NF55 electronic component of STMicroelectronics
STP85NF55 STMicroelectronics
STP85NF55 MOSFETs
STP85NF55  Semiconductors

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See Product Specifications
Part No. STP85NF55
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 55 Volt 80 Amp
Datasheet: STP85NF55 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
106: USD 1.1144 ea
Line Total: USD 118.13 
Availability - 0
MOQ: 106  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 03 Apr to Wed. 09 Apr
MOQ : 50
Multiples : 50
50 : USD 1.1362
200 : USD 1.0925
750 : USD 1.0488
1250 : USD 1.0488
2500 : USD 1.0488

0
Ship by Thu. 10 Apr to Tue. 15 Apr
MOQ : 106
Multiples : 1
106 : USD 1.1144

0
Ship by Tue. 01 Apr to Thu. 03 Apr
MOQ : 1
Multiples : 1
1 : USD 7.6709
10 : USD 2.7676
25 : USD 2.6071
100 : USD 2.2261
500 : USD 1.825
1000 : USD 1.5141

0
Ship by Thu. 03 Apr to Wed. 09 Apr
MOQ : 50
Multiples : 50
50 : USD 1.9633
200 : USD 1.8471

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP85NF55 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP85NF55 and other electronic components in the MOSFETs category and beyond.

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STB85NF55T4, STP85NF55 Datasheet Automotive-grade N-channel 55 V, 6.2 m typ., 80 A, STripFET II Power MOSFETs in DPAK and TO-220 packages Features V R max. I Type DS DS(on) D TAB TAB STB85NF55T4 55 V 8.0 m 80 A STP85NF55 3 1 3 2 D PAK TO-220 2 1 AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested D(2, TAB) Low gate charge Applications Switching applications G(1) Description S(3) These Power MOSFETs have been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB85NF55T4 STP85NF55 Product summary Order code STB85NF55T4 Marking B85NF55 Package DPAK Packing Tape and reel Order code STP85NF55 Marking P85NF55 Package TO-220 Packing Tube DS2569 - Rev 12 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB85NF55T4, STP85NF55 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 A C (1) I D Drain current (continuous) at T = 100 C 80 A C (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 300 W TOT C Derating factor 2.0 W/C (3) E Single-pulse avalanche energy 980 mJ AS (4) dv/dt Peak diode recovery voltage slope 10 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting T = 25 C, I = 40 A, V = 37.5 V J D DD 4. I 80 A, di/dt 300 A/s, V V , T T SD DD (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb DS2569 - Rev 12 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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