STP80N6F6 STMicroelectronics

STP80N6F6 Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB (1) STP80N6F6 60 V 5 m 80 A 1. Current limited by package 3 Designed for automotive applications and 2 1 AEC-Q101 qualified Low gate charge TO-220 Very low on-resistance High avalanche ruggedness Applications Figure 1. Internal schematic diagram Switching applications % 7 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate * structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 6 0 Y Table 1. Device summary Order code Marking Packages Packaging STP80N6F6 80N6F6 TO-220 Tube January 2014 DocID023470 Rev 2 1/12 This is information on a product in full production. www.st.comContents STP80N6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Package mechanical data . 8 4 Revision history . 11 2/12 DocID023470 Rev 2